Gate dependent photo-responses of carbon nanotube field effect phototransistors

H. Z. Chen; N. Xi; K. W.C. Lai; L. L. Chen; R. G. Yang; B. Song

doi:10.1088/0957-4484/23/38/385203

Gate dependent photo-responses of carbon nanotube field effect phototransistors

H. Z. Chen, N. Xi, K. W.C. Lai, L. L. Chen, R. G. Yang, B. Song

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Gate dependent photoconductivity of carbon nanotube (CNT) field effect phototransistors (FEPs) was systematically investigated in this study. The photo-response comparisons of CNT FEPs with symmetric and asymmetric metal structures connecting to the same CNT revealed that the gate effect contributed to a sensitivity improvement with a lower dark current, a higher photocurrent, and an enhanced photovoltage. A functionalized asymmetric FEP, fabricated by partially doping the CNT utilizing a polyethylene imine (PEI) polymer, verified that FEPs delivered a better performance by using asymmetric structures. A multi-gate FEP, with three pairs of side-gates that can electrostatically dope different sections of a CNT independently, was fabricated to examine the gate structure dependent photo-responses. Experimental measurements showed an unconventional photocurrent improvement that was weakly dependent on the gate location, which was attributed to the unique charge distribution of one-dimensional semiconductors.

Original language	English (US)
Article number	385203
Journal	Nanotechnology
Volume	23
Issue number	38
DOIs	https://doi.org/10.1088/0957-4484/23/38/385203
State	Published - Sep 28 2012
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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abstract = "Gate dependent photoconductivity of carbon nanotube (CNT) field effect phototransistors (FEPs) was systematically investigated in this study. The photo-response comparisons of CNT FEPs with symmetric and asymmetric metal structures connecting to the same CNT revealed that the gate effect contributed to a sensitivity improvement with a lower dark current, a higher photocurrent, and an enhanced photovoltage. A functionalized asymmetric FEP, fabricated by partially doping the CNT utilizing a polyethylene imine (PEI) polymer, verified that FEPs delivered a better performance by using asymmetric structures. A multi-gate FEP, with three pairs of side-gates that can electrostatically dope different sections of a CNT independently, was fabricated to examine the gate structure dependent photo-responses. Experimental measurements showed an unconventional photocurrent improvement that was weakly dependent on the gate location, which was attributed to the unique charge distribution of one-dimensional semiconductors.",

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AU - Chen, H. Z.

AU - Xi, N.

AU - Lai, K. W.C.

AU - Chen, L. L.

AU - Yang, R. G.

AU - Song, B.

PY - 2012/9/28

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N2 - Gate dependent photoconductivity of carbon nanotube (CNT) field effect phototransistors (FEPs) was systematically investigated in this study. The photo-response comparisons of CNT FEPs with symmetric and asymmetric metal structures connecting to the same CNT revealed that the gate effect contributed to a sensitivity improvement with a lower dark current, a higher photocurrent, and an enhanced photovoltage. A functionalized asymmetric FEP, fabricated by partially doping the CNT utilizing a polyethylene imine (PEI) polymer, verified that FEPs delivered a better performance by using asymmetric structures. A multi-gate FEP, with three pairs of side-gates that can electrostatically dope different sections of a CNT independently, was fabricated to examine the gate structure dependent photo-responses. Experimental measurements showed an unconventional photocurrent improvement that was weakly dependent on the gate location, which was attributed to the unique charge distribution of one-dimensional semiconductors.

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Gate dependent photo-responses of carbon nanotube field effect phototransistors

Abstract

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