Generalized ellipsometry of complex mediums in layered systems

Mathias Schubert; Alexander Kasic; Tino Hofmann; Volker Gottschalch; Jürgen Off; Ferdinand Scholz; Eva Schubert; Horst Neumann; Ian Hodgkinson; Matthew Arnold; Wayne Dollase; Craig M. Herzinger

doi:10.1117/12.472993

Generalized ellipsometry of complex mediums in layered systems

Mathias Schubert, Alexander Kasic, Tino Hofmann, Volker Gottschalch, Jürgen Off, Ferdinand Scholz, Eva Schubert, Horst Neumann, Ian Hodgkinson, Matthew Arnold, Wayne Dollase, Craig M. Herzinger

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A new global approach, called "Generalized Ellipsometry", is now capable to characterize the optical and structural properties of general anisotropic layered systems, including absorption, and can be applied, in general, to determine the linear response tensor elements for wavelengths from the far infrared to the deep ultra violet. This technique enables new insights into physical phenomena of layered anisotropic mediums, and can provide precise structural and optical data of novel compound materials. Experimental results are presented for stibnite single crystals as example for an arbitrary biaxial absorbing material, a wurtzite GaN thin film with uniaxial anisotropy grown on sapphire, a spontaneously atomically ordered III-V semiconductor alloy thin film, and a sculptured titanium dioxide film with symmetrically dielectric tensor properties.

Original language	English (US)
Pages (from-to)	264-276
Number of pages	13
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4806
DOIs	https://doi.org/10.1117/12.472993
State	Published - 2002

Keywords

Anisotropic optical constants
Bulk and thin film birefringence
Generalized ellipsometry
Optical Jones matrix
Phonon modes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Generalized ellipsometry of complex mediums in layered systems",

abstract = "A new global approach, called {"}Generalized Ellipsometry{"}, is now capable to characterize the optical and structural properties of general anisotropic layered systems, including absorption, and can be applied, in general, to determine the linear response tensor elements for wavelengths from the far infrared to the deep ultra violet. This technique enables new insights into physical phenomena of layered anisotropic mediums, and can provide precise structural and optical data of novel compound materials. Experimental results are presented for stibnite single crystals as example for an arbitrary biaxial absorbing material, a wurtzite GaN thin film with uniaxial anisotropy grown on sapphire, a spontaneously atomically ordered III-V semiconductor alloy thin film, and a sculptured titanium dioxide film with symmetrically dielectric tensor properties.",

keywords = "Anisotropic optical constants, Bulk and thin film birefringence, Generalized ellipsometry, Optical Jones matrix, Phonon modes",

author = "Mathias Schubert and Alexander Kasic and Tino Hofmann and Volker Gottschalch and J{\"u}rgen Off and Ferdinand Scholz and Eva Schubert and Horst Neumann and Ian Hodgkinson and Matthew Arnold and Wayne Dollase and Herzinger, {Craig M.}",

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doi = "10.1117/12.472993",

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T1 - Generalized ellipsometry of complex mediums in layered systems

AU - Schubert, Mathias

AU - Kasic, Alexander

AU - Hofmann, Tino

AU - Gottschalch, Volker

AU - Off, Jürgen

AU - Scholz, Ferdinand

AU - Schubert, Eva

AU - Neumann, Horst

AU - Hodgkinson, Ian

AU - Arnold, Matthew

AU - Dollase, Wayne

AU - Herzinger, Craig M.

PY - 2002

Y1 - 2002

N2 - A new global approach, called "Generalized Ellipsometry", is now capable to characterize the optical and structural properties of general anisotropic layered systems, including absorption, and can be applied, in general, to determine the linear response tensor elements for wavelengths from the far infrared to the deep ultra violet. This technique enables new insights into physical phenomena of layered anisotropic mediums, and can provide precise structural and optical data of novel compound materials. Experimental results are presented for stibnite single crystals as example for an arbitrary biaxial absorbing material, a wurtzite GaN thin film with uniaxial anisotropy grown on sapphire, a spontaneously atomically ordered III-V semiconductor alloy thin film, and a sculptured titanium dioxide film with symmetrically dielectric tensor properties.

AB - A new global approach, called "Generalized Ellipsometry", is now capable to characterize the optical and structural properties of general anisotropic layered systems, including absorption, and can be applied, in general, to determine the linear response tensor elements for wavelengths from the far infrared to the deep ultra violet. This technique enables new insights into physical phenomena of layered anisotropic mediums, and can provide precise structural and optical data of novel compound materials. Experimental results are presented for stibnite single crystals as example for an arbitrary biaxial absorbing material, a wurtzite GaN thin film with uniaxial anisotropy grown on sapphire, a spontaneously atomically ordered III-V semiconductor alloy thin film, and a sculptured titanium dioxide film with symmetrically dielectric tensor properties.

KW - Anisotropic optical constants

KW - Bulk and thin film birefringence

KW - Generalized ellipsometry

KW - Optical Jones matrix

KW - Phonon modes

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Generalized ellipsometry of complex mediums in layered systems

Abstract

Keywords

ASJC Scopus subject areas

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