Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior

V. Darakchieva; M. Schubert; J. Birch; A. Kasic; S. Tungasmita; T. Paskova; B. Monemar

doi:10.1016/j.physb.2003.09.059

Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior

V. Darakchieva, M. Schubert, J. Birch, A. Kasic, S. Tungasmita, T. Paskova, B. Monemar

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The effect of film thickness on the strain and structural properties of thin epitaxial AlN films has been investigated, and a sub-layer model of the degree of strain and related defects for all films is suggested. The vibrational properties of the films have been studied by generalized infrared spectroscopic ellipsometry. The proposed sub-layer model has been successfully applied to the analysis of the ellipsometry data trough model calculations of the infrared dielectric function.

Original language	English (US)
Pages (from-to)	416-420
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	340-342
DOIs	https://doi.org/10.1016/j.physb.2003.09.059
State	Published - Dec 31 2003
Externally published	Yes
Event	Proceedings of the 22nd International Conference on Defects in (ICDS-22) - Aarhus, Denmark Duration: Jul 28 2003 → Aug 1 2003

Keywords

AlN
Infrared ellipsometry
Phonons
Strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2003.09.059

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title = "Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior",

abstract = "The effect of film thickness on the strain and structural properties of thin epitaxial AlN films has been investigated, and a sub-layer model of the degree of strain and related defects for all films is suggested. The vibrational properties of the films have been studied by generalized infrared spectroscopic ellipsometry. The proposed sub-layer model has been successfully applied to the analysis of the ellipsometry data trough model calculations of the infrared dielectric function.",

keywords = "AlN, Infrared ellipsometry, Phonons, Strain",

author = "V. Darakchieva and M. Schubert and J. Birch and A. Kasic and S. Tungasmita and T. Paskova and B. Monemar",

year = "2003",

month = dec,

day = "31",

doi = "10.1016/j.physb.2003.09.059",

language = "English (US)",

volume = "340-342",

pages = "416--420",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

note = "Proceedings of the 22nd International Conference on Defects in (ICDS-22) ; Conference date: 28-07-2003 Through 01-08-2003",

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TY - JOUR

T1 - Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior

AU - Darakchieva, V.

AU - Schubert, M.

AU - Birch, J.

AU - Kasic, A.

AU - Tungasmita, S.

AU - Paskova, T.

AU - Monemar, B.

PY - 2003/12/31

Y1 - 2003/12/31

N2 - The effect of film thickness on the strain and structural properties of thin epitaxial AlN films has been investigated, and a sub-layer model of the degree of strain and related defects for all films is suggested. The vibrational properties of the films have been studied by generalized infrared spectroscopic ellipsometry. The proposed sub-layer model has been successfully applied to the analysis of the ellipsometry data trough model calculations of the infrared dielectric function.

AB - The effect of film thickness on the strain and structural properties of thin epitaxial AlN films has been investigated, and a sub-layer model of the degree of strain and related defects for all films is suggested. The vibrational properties of the films have been studied by generalized infrared spectroscopic ellipsometry. The proposed sub-layer model has been successfully applied to the analysis of the ellipsometry data trough model calculations of the infrared dielectric function.

KW - AlN

KW - Infrared ellipsometry

KW - Phonons

KW - Strain

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U2 - 10.1016/j.physb.2003.09.059

DO - 10.1016/j.physb.2003.09.059

M3 - Conference article

AN - SCOPUS:0347764778

SN - 0921-4526

VL - 340-342

SP - 416

EP - 420

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 22nd International Conference on Defects in (ICDS-22)

Y2 - 28 July 2003 through 1 August 2003

ER -

Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior

Abstract

Keywords

ASJC Scopus subject areas

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