Abstract
We report the observation of giant photoresistivity in electrochemically self-assembled CdS and ZnSe nanowires electrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in "normally on" infrared photodetectors and optically controlled switches.
Original language | English (US) |
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Pages (from-to) | 4423-4425 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 26 |
DOIs | |
State | Published - Dec 24 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)