Giant photoresistivity and optically controlled switching in self-assembled nanowires

N. Kouklin; L. Menon; A. Z. Wong; D. W. Thompson; J. A. Woollam; P. F. Williams; S. Bandyopadhyay

doi:10.1063/1.1427156

Giant photoresistivity and optically controlled switching in self-assembled nanowires

N. Kouklin, L. Menon, A. Z. Wong, D. W. Thompson, J. A. Woollam, P. F. Williams, S. Bandyopadhyay

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

127 Scopus citations

Abstract

We report the observation of giant photoresistivity in electrochemically self-assembled CdS and ZnSe nanowires electrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in "normally on" infrared photodetectors and optically controlled switches.

Original language	English (US)
Pages (from-to)	4423-4425
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	26
DOIs	https://doi.org/10.1063/1.1427156
State	Published - Dec 24 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1427156

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AU - Kouklin, N.

AU - Menon, L.

AU - Wong, A. Z.

AU - Thompson, D. W.

AU - Woollam, J. A.

AU - Williams, P. F.

AU - Bandyopadhyay, S.

PY - 2001/12/24

Y1 - 2001/12/24

N2 - We report the observation of giant photoresistivity in electrochemically self-assembled CdS and ZnSe nanowires electrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in "normally on" infrared photodetectors and optically controlled switches.

AB - We report the observation of giant photoresistivity in electrochemically self-assembled CdS and ZnSe nanowires electrodeposited in a porous alumina film. The resistance of these nanowires increases by one to two orders of magnitude when exposed to infrared radiation, possibly because of real-space transfer of electrons from the nanowires into the surrounding alumina by photon absorption. This phenomenon has potential applications in "normally on" infrared photodetectors and optically controlled switches.

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Giant photoresistivity and optically controlled switching in self-assembled nanowires

Abstract

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