Textured gadolinium nitride (GdN) thin films grown on (100) lanthanum aluminum oxide substrates were prepared by chemical vapor deposition with gadolinium chloride and ammonia. The films were found to have a (100) planar orientation and a growth rate of 102±5nm/min. Xray diffraction patterns show that the (200) reflection peaks from these GdN films have full widths at half maximum of ca. 1.2°.
ASJC Scopus subject areas
- Surfaces and Interfaces
- Process Chemistry and Technology