Growth of self-aligned single-walled carbon nanotubes by laser-assisted chemical vapor deposition

M. Mahjouri, Y. S. Zhou, W. Xiong, Y. F. Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Controllable growth of self-aligned single-walled carbon nanotubes (SWNTs) was developed using Laser-assisted chemical vapor deposition (LCVD) method. By integrating both electrical-field and gas-flow induced orientation effects in the LCVD process, SWNT growth direction was decided. According to Raman measurements, narrow diameter distribution of the SWNTs was realized by controlling reaction temperature. Individual SWNT bridging opposite Mo electrodes was achieved by creating local electrical field using point-to-point electrodes. Back-gated single-walled carbon nanotube based field-effect transistors (SWNT-FETs) were fabricated using LCVD method, and showed typical p-type behavior.

Original languageEnglish (US)
Title of host publicationLaser-based Micro- and Nanopackaging and Assembly II
DOIs
StatePublished - 2008
EventLaser-based Micro- and Nanopackaging and Assembly II - San Jose, CA, United States
Duration: Jan 22 2008Jan 24 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6880
ISSN (Print)0277-786X

Conference

ConferenceLaser-based Micro- and Nanopackaging and Assembly II
CountryUnited States
CitySan Jose, CA
Period1/22/081/24/08

Keywords

  • Laser-assisted chemical vapor deposition (LCVD)
  • Self-alignment
  • Single-walled carbon nanotube field-effect transistors (SWNT-FETs)
  • Single-walled carbon nanotubes (SWNTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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