Dark and illuminated C-V and G-V characteristics of A1/a-carbon/silicon MIS structures have been measured in the frequency range of 10 kHz to 10 MHz. The a-carbon passivating layer is prepared by d.c. sputtering of a graphite target in Ar gas. There is no evidence of Fermi level pinning, and surface carrier inversion is clearly demonstrated. Electrical instabilities are noted and briefly discussed. The high frequency electrical behavior seems to be dominated by states in the dielectric rather than states at the interface. a-carbon appears to be a promising dielectric material for use in silicon solid state electronics.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry