High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites

Rui Dong, Yanjun Fang, Jungseok Chae, Jun Dai, Zhengguo Xiao, Qingfeng Dong, Yongbo Yuan, Andrea Centrone, Xiao Cheng Zeng, Jinsong Huang

Research output: Contribution to journalArticle

362 Scopus citations

Abstract

Solution-processed organometal trihalide perovskite photodetectors show a high photoconductive gain of above 400 across the UV to NIR range at a very low bias of -1 V. The charge traps caused by large concentrations of Pb2+ cations at the top surface of the perovskite film are critical for achieving high gain in these devices via a trapped-hole-induced electron injection mechanism.

Original languageEnglish (US)
Pages (from-to)1912-1918
Number of pages7
JournalAdvanced Materials
Volume27
Issue number11
DOIs
StatePublished - Mar 18 2015

Keywords

  • optoelectronics
  • organolead triiodide perovskites
  • photodetectors
  • solution processing

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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    Dong, R., Fang, Y., Chae, J., Dai, J., Xiao, Z., Dong, Q., Yuan, Y., Centrone, A., Zeng, X. C., & Huang, J. (2015). High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites. Advanced Materials, 27(11), 1912-1918. https://doi.org/10.1002/adma.201405116