High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress

T. Paskova; T. Suski; M. Bockowski; P. P. Paskov; V. Darakchieva; B. Monemar; F. Tuomisto; K. Saarinen; N. Ashkenov; M. Schubert; C. Roder; D. Hommel

High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress

T. Paskova, T. Suski, M. Bockowski, P. P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder, D. Hommel

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.

Original language	English (US)
Article number	E8.18
Pages (from-to)	429-434
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	831
State	Published - 2005
Externally published	Yes
Event	2004 MRS Fall Meeting - Boston, MA, United States Duration: Nov 29 2004 → Dec 3 2004

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{f8d05b869d4e4f7390f5da8fd3cf0878,

title = "High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress",

abstract = "The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.",

author = "T. Paskova and T. Suski and M. Bockowski and Paskov, {P. P.} and V. Darakchieva and B. Monemar and F. Tuomisto and K. Saarinen and N. Ashkenov and M. Schubert and C. Roder and D. Hommel",

year = "2005",

language = "English (US)",

volume = "831",

pages = "429--434",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "2004 MRS Fall Meeting ; Conference date: 29-11-2004 Through 03-12-2004",

}

TY - JOUR

T1 - High pressure annealing of HVPE GaN free-standing films

T2 - 2004 MRS Fall Meeting

AU - Paskova, T.

AU - Suski, T.

AU - Bockowski, M.

AU - Paskov, P. P.

AU - Darakchieva, V.

AU - Monemar, B.

AU - Tuomisto, F.

AU - Saarinen, K.

AU - Ashkenov, N.

AU - Schubert, M.

AU - Roder, C.

AU - Hommel, D.

PY - 2005

Y1 - 2005

N2 - The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.

AB - The effect of high temperature, high pressure annealing on morphology, optical and structural properties of free-standing GaN films grown by hydride vapor phase epitaxy is studied. The annealing is found to change the intensities of the photoluminescence peaks as a result of a redistribution of the impurities and native defects in the thick GaN films. A positron annihilation study shows a decrease of the Ga vacancy-related defects below the detection limit after the annealing. The defect redistribution is correlated with a flattening of the stress distribution across the thickness, as revealed by micro Raman study, and with a decrease of the curvature of the annealed free-standing films.

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UR - http://www.scopus.com/inward/citedby.url?scp=23844478223&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:23844478223

SN - 0272-9172

VL - 831

SP - 429

EP - 434

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - E8.18

Y2 - 29 November 2004 through 3 December 2004

ER -

High pressure annealing of HVPE GaN free-standing films: Redistribution of defects and stress

Abstract

ASJC Scopus subject areas

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