HIGH-sensitive magnetoresistive sensors with integrated micro-fabricated and external magnetic flux concentrators

X. Yin, S. Liou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The sensitivity of the magnetoresistive sensors based on magnetic tunnel junctions (MTJs) are to reduce sources of noise, to increase the signal, and to understand the fundamental limitations involved. Relevant properties, such as tunneling magnetoresistance ratio (TMR), coercivity (Hc), exchange coupling field (He), domain structures, and noise sensitively depend on the free layer structure in the MTJ [1-9]. There are also external factors that affect the performance of the sensor, such as the design of magnetic concentrators [10]. We have studied the using of micro-magnetic concentrators and external magnetic concentrators to improve the sensitivity of the magnetoresistive sensor. By optimizing the TMR ratio, Hc, He, domain structures, noise and magnetic concentrators, we fabricate a sensor with a sensitivity as high as 5,146 %/mT. This magnetic sensor only dissipates 200 μW of power while operating under an applied voltage of 1 V.

Original languageEnglish (US)
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
StatePublished - Jul 14 2015
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: May 11 2015May 15 2015

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
Country/TerritoryChina
CityBeijing
Period5/11/155/15/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films

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