TY - GEN
T1 - HIGH-sensitive magnetoresistive sensors with integrated micro-fabricated and external magnetic flux concentrators
AU - Yin, X.
AU - Liou, S.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - The sensitivity of the magnetoresistive sensors based on magnetic tunnel junctions (MTJs) are to reduce sources of noise, to increase the signal, and to understand the fundamental limitations involved. Relevant properties, such as tunneling magnetoresistance ratio (TMR), coercivity (Hc), exchange coupling field (He), domain structures, and noise sensitively depend on the free layer structure in the MTJ [1-9]. There are also external factors that affect the performance of the sensor, such as the design of magnetic concentrators [10]. We have studied the using of micro-magnetic concentrators and external magnetic concentrators to improve the sensitivity of the magnetoresistive sensor. By optimizing the TMR ratio, Hc, He, domain structures, noise and magnetic concentrators, we fabricate a sensor with a sensitivity as high as 5,146 %/mT. This magnetic sensor only dissipates 200 μW of power while operating under an applied voltage of 1 V.
AB - The sensitivity of the magnetoresistive sensors based on magnetic tunnel junctions (MTJs) are to reduce sources of noise, to increase the signal, and to understand the fundamental limitations involved. Relevant properties, such as tunneling magnetoresistance ratio (TMR), coercivity (Hc), exchange coupling field (He), domain structures, and noise sensitively depend on the free layer structure in the MTJ [1-9]. There are also external factors that affect the performance of the sensor, such as the design of magnetic concentrators [10]. We have studied the using of micro-magnetic concentrators and external magnetic concentrators to improve the sensitivity of the magnetoresistive sensor. By optimizing the TMR ratio, Hc, He, domain structures, noise and magnetic concentrators, we fabricate a sensor with a sensitivity as high as 5,146 %/mT. This magnetic sensor only dissipates 200 μW of power while operating under an applied voltage of 1 V.
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U2 - 10.1109/INTMAG.2015.7156558
DO - 10.1109/INTMAG.2015.7156558
M3 - Conference contribution
AN - SCOPUS:84942447047
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -