Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, M. Schubert

Research output: Contribution to journalArticle

37 Scopus citations

Abstract

We report noncontact, optical determination of free-charge carrier mobility, sheet density, and resistivity parameters in epitaxial graphene at room temperature using terahertz and midinfrared ellipsometry and optical-Hall effect measurements. The graphene layers are grown on Si- and C-terminated semi-insulating 6H silicon carbide polar surfaces. Data analysis using classical Drude functions and multilayer modeling render the existence of a p -type channel with different sheet densities and effective mass parameters for the two polar surfaces. The optically obtained parameters are in excellent agreement with results from electrical Hall effect measurements.

Original languageEnglish (US)
Article number041906
JournalApplied Physics Letters
Volume98
Issue number4
DOIs
StatePublished - Jan 24 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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