Hole diffusion profile in a p- p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

T. Hofmann; C. M. Herzinger; T. E. Tiwald; J. A. Woollam; M. Schubert

doi:10.1063/1.3184567

Hole diffusion profile in a p- p⁺ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

T. Hofmann, C. M. Herzinger, T. E. Tiwald, J. A. Woollam, M. Schubert

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Noninvasive optical measurement of hole diffusion profiles in p- p ⁺ silicon homojunction is reported by ellipsometry in the terahertz (0.2-1.5 THz) and midinfrared (9-50 THz) spectral regions. In the terahertz region a surface-guided wave resonance with transverse-electrical polarization is observed at the boundary of the p- p⁺ homojunction, and which is found to be extremely sensitive to the low-doped p -type carrier concentration as well as to the hole diffusion profile within the p- p⁺ homojunction. Effective mass approximations allow determination of homojunction hole concentrations as p=2.9× 10¹⁵ cm^-3, p ⁺ =5.6× 10¹⁸ cm^-3, and diffusion time constant Dt=7.7× 10^-3 μ m², in agreement with previous electrical investigations.

Original language	English (US)
Article number	032102
Journal	Applied Physics Letters
Volume	95
Issue number	3
DOIs	https://doi.org/10.1063/1.3184567
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3184567

Cite this

@article{b4df42632de74cfbbfebee932a136577,

title = "Hole diffusion profile in a p- p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry",

abstract = "Noninvasive optical measurement of hole diffusion profiles in p- p + silicon homojunction is reported by ellipsometry in the terahertz (0.2-1.5 THz) and midinfrared (9-50 THz) spectral regions. In the terahertz region a surface-guided wave resonance with transverse-electrical polarization is observed at the boundary of the p- p+ homojunction, and which is found to be extremely sensitive to the low-doped p -type carrier concentration as well as to the hole diffusion profile within the p- p+ homojunction. Effective mass approximations allow determination of homojunction hole concentrations as p=2.9× 1015 cm-3, p + =5.6× 1018 cm-3, and diffusion time constant Dt=7.7× 10-3 μ m2, in agreement with previous electrical investigations.",

author = "T. Hofmann and Herzinger, {C. M.} and Tiwald, {T. E.} and Woollam, {J. A.} and M. Schubert",

note = "Funding Information: The authors would like to acknowledge financial support from the Army Research Office (D. Woolard, under Contract No. A08-T013), the National Science Foundation in MRSEC QSPIN at UNL, startup funds from the CoE at UNL, and the J.A. Woollam Foundation.",

year = "2009",

doi = "10.1063/1.3184567",

language = "English (US)",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Hole diffusion profile in a p- p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

AU - Hofmann, T.

AU - Herzinger, C. M.

AU - Tiwald, T. E.

AU - Woollam, J. A.

AU - Schubert, M.

N1 - Funding Information: The authors would like to acknowledge financial support from the Army Research Office (D. Woolard, under Contract No. A08-T013), the National Science Foundation in MRSEC QSPIN at UNL, startup funds from the CoE at UNL, and the J.A. Woollam Foundation.

PY - 2009

Y1 - 2009

N2 - Noninvasive optical measurement of hole diffusion profiles in p- p + silicon homojunction is reported by ellipsometry in the terahertz (0.2-1.5 THz) and midinfrared (9-50 THz) spectral regions. In the terahertz region a surface-guided wave resonance with transverse-electrical polarization is observed at the boundary of the p- p+ homojunction, and which is found to be extremely sensitive to the low-doped p -type carrier concentration as well as to the hole diffusion profile within the p- p+ homojunction. Effective mass approximations allow determination of homojunction hole concentrations as p=2.9× 1015 cm-3, p + =5.6× 1018 cm-3, and diffusion time constant Dt=7.7× 10-3 μ m2, in agreement with previous electrical investigations.

AB - Noninvasive optical measurement of hole diffusion profiles in p- p + silicon homojunction is reported by ellipsometry in the terahertz (0.2-1.5 THz) and midinfrared (9-50 THz) spectral regions. In the terahertz region a surface-guided wave resonance with transverse-electrical polarization is observed at the boundary of the p- p+ homojunction, and which is found to be extremely sensitive to the low-doped p -type carrier concentration as well as to the hole diffusion profile within the p- p+ homojunction. Effective mass approximations allow determination of homojunction hole concentrations as p=2.9× 1015 cm-3, p + =5.6× 1018 cm-3, and diffusion time constant Dt=7.7× 10-3 μ m2, in agreement with previous electrical investigations.

UR - http://www.scopus.com/inward/record.url?scp=67651244228&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67651244228&partnerID=8YFLogxK

U2 - 10.1063/1.3184567

DO - 10.1063/1.3184567

M3 - Article

AN - SCOPUS:67651244228

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032102

ER -

Hole diffusion profile in a p- p⁺ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this