Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry

G. Leibiger; V. Gottschalch; N. Razek; A. Schindler; M. Schubert

doi:10.1016/j.tsf.2003.11.203

Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry

G. Leibiger, V. Gottschalch, N. Razek, A. Schindler, M. Schubert

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of hydrogen implantation (E_ion∼300 eV, dose∼4.4×10¹⁷ ions/cm²) on the optical properties of In_0.053Ga_0.947N_0.017As _0.983/GaAs single quantum-wells are studied by spectroscopic ellipsometry and photoluminescence. A strong hydrogen-related blueshift of the quantum-well transition energy is observed by both techniques. After a thermal treatment at 300 °C, the original transition energy is nearly recovered. Optical constants of as-grown and implanted In_0.053Ga _0.947N_0.017As_0.983 quantum-well layers are presented in the near-band gap spectral region (0.75-1.5 eV).

Original language	English (US)
Pages (from-to)	231-234
Number of pages	4
Journal	Thin Solid Films
Volume	455-456
DOIs	https://doi.org/10.1016/j.tsf.2003.11.203
State	Published - May 1 2004
Externally published	Yes
Event	The 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria Duration: Jul 6 2003 → Jul 11 2003

Keywords

Ellipsometry
Hydrogen implantation
InGaNAs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2003.11.203

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@article{f472e90ada384a0198e2509ea146780c,

title = "Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry",

abstract = "The effects of hydrogen implantation (Eion∼300 eV, dose∼4.4×1017 ions/cm2) on the optical properties of In0.053Ga0.947N0.017As 0.983/GaAs single quantum-wells are studied by spectroscopic ellipsometry and photoluminescence. A strong hydrogen-related blueshift of the quantum-well transition energy is observed by both techniques. After a thermal treatment at 300 °C, the original transition energy is nearly recovered. Optical constants of as-grown and implanted In0.053Ga 0.947N0.017As0.983 quantum-well layers are presented in the near-band gap spectral region (0.75-1.5 eV).",

keywords = "Ellipsometry, Hydrogen implantation, InGaNAs",

author = "G. Leibiger and V. Gottschalch and N. Razek and A. Schindler and M. Schubert",

note = "Funding Information: This work has been supported by Deutsche Forschungsgemeinschaft under contracts G0 629/4 and 5. Additionally, we wish to thank Mrs G. Benndorf, Dr K. Otte and Dr F. Frost for fruitful discussions.; The 3rd International Conference on Spectroscopic Ellipsometry ; Conference date: 06-07-2003 Through 11-07-2003",

year = "2004",

month = may,

day = "1",

doi = "10.1016/j.tsf.2003.11.203",

language = "English (US)",

volume = "455-456",

pages = "231--234",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry

AU - Leibiger, G.

AU - Gottschalch, V.

AU - Razek, N.

AU - Schindler, A.

AU - Schubert, M.

N1 - Funding Information: This work has been supported by Deutsche Forschungsgemeinschaft under contracts G0 629/4 and 5. Additionally, we wish to thank Mrs G. Benndorf, Dr K. Otte and Dr F. Frost for fruitful discussions.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The effects of hydrogen implantation (Eion∼300 eV, dose∼4.4×1017 ions/cm2) on the optical properties of In0.053Ga0.947N0.017As 0.983/GaAs single quantum-wells are studied by spectroscopic ellipsometry and photoluminescence. A strong hydrogen-related blueshift of the quantum-well transition energy is observed by both techniques. After a thermal treatment at 300 °C, the original transition energy is nearly recovered. Optical constants of as-grown and implanted In0.053Ga 0.947N0.017As0.983 quantum-well layers are presented in the near-band gap spectral region (0.75-1.5 eV).

AB - The effects of hydrogen implantation (Eion∼300 eV, dose∼4.4×1017 ions/cm2) on the optical properties of In0.053Ga0.947N0.017As 0.983/GaAs single quantum-wells are studied by spectroscopic ellipsometry and photoluminescence. A strong hydrogen-related blueshift of the quantum-well transition energy is observed by both techniques. After a thermal treatment at 300 °C, the original transition energy is nearly recovered. Optical constants of as-grown and implanted In0.053Ga 0.947N0.017As0.983 quantum-well layers are presented in the near-band gap spectral region (0.75-1.5 eV).

KW - Ellipsometry

KW - Hydrogen implantation

KW - InGaNAs

UR - http://www.scopus.com/inward/record.url?scp=2142641656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2142641656&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.11.203

DO - 10.1016/j.tsf.2003.11.203

M3 - Conference article

AN - SCOPUS:2142641656

VL - 455-456

SP - 231

EP - 234

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

T2 - The 3rd International Conference on Spectroscopic Ellipsometry

Y2 - 6 July 2003 through 11 July 2003

ER -

Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry

Abstract

Keywords

ASJC Scopus subject areas

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