Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry

G. Leibiger, V. Gottschalch, N. Razek, A. Schindler, M. Schubert

Research output: Contribution to journalConference articlepeer-review


The effects of hydrogen implantation (Eion∼300 eV, dose∼4.4×1017 ions/cm2) on the optical properties of In0.053Ga0.947N0.017As 0.983/GaAs single quantum-wells are studied by spectroscopic ellipsometry and photoluminescence. A strong hydrogen-related blueshift of the quantum-well transition energy is observed by both techniques. After a thermal treatment at 300 °C, the original transition energy is nearly recovered. Optical constants of as-grown and implanted In0.053Ga 0.947N0.017As0.983 quantum-well layers are presented in the near-band gap spectral region (0.75-1.5 eV).

Original languageEnglish (US)
Pages (from-to)231-234
Number of pages4
JournalThin Solid Films
StatePublished - May 1 2004
Externally publishedYes
EventThe 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria
Duration: Jul 6 2003Jul 11 2003


  • Ellipsometry
  • Hydrogen implantation
  • InGaNAs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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