Abstract
This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SOI device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.
| Original language | English (US) |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting |
| Editors | Anon |
| Publisher | Publ by IEEE |
| Pages | 739-742 |
| Number of pages | 4 |
| ISBN (Print) | 0780314506 |
| State | Published - 1993 |
| Event | Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: Dec 5 1993 → Dec 8 1993 |
Publication series
| Name | Technical Digest - International Electron Devices Meeting |
|---|---|
| ISSN (Print) | 0163-1918 |
Other
| Other | Proceedings of the 1993 IEEE International Electron Devices Meeting |
|---|---|
| City | Washington, DC, USA |
| Period | 12/5/93 → 12/8/93 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Wei, H. F., Kalkhoran, N. M., Namavar, F., & Chung, J. E. (1993). Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 739-742). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.