Improvement of Breakdown Voltage and Off-State Leakage in Ge-Implanted SOI n-MOSFETs

H. F. Wei; N. M. Kalkhoran; F. Namavar; J. E. Chung

Improvement of Breakdown Voltage and Off-State Leakage in Ge-Implanted SOI n-MOSFETs

H. F. Wei, N. M. Kalkhoran, F. Namavar, J. E. Chung

Research output: Contribution to journal › Conference article › peer-review

Abstract

This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SO1 device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.

Original language	English (US)
Pages (from-to)	739-742
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1993
Externally published	Yes
Event	Proceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA Duration: Dec 5 1993 → Dec 8 1993

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{9591d881d3fb4c7dbbf158071c2a8844,

title = "Improvement of Breakdown Voltage and Off-State Leakage in Ge-Implanted SOI n-MOSFETs",

abstract = "This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SO1 device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.",

author = "Wei, {H. F.} and Kalkhoran, {N. M.} and F. Namavar and Chung, {J. E.}",

note = "Funding Information: The authors thanks L. T. Su for supplying the masks used in device fabrication,M. J. Sherony for supplying the mobility measurement program, and the ICL staff at MIT for help in processing. This project was supported by an Analog Devices Career DevelopmentChair and DNA contract 001-90-C-0080. Funding Information: The authors thanks L. T. Su for supplying the masks used in device fabrication, M. J. Sherony for supplying the mobility measurement program, and the ICL staff at MIT for help in processing. This project was supported by an Analog Devices Career Development Chair and DNA contract 001-90-C-0080. Publisher Copyright: {\textcopyright} 1993 IEEE; Proceedings of the 1993 IEEE International Electron Devices Meeting ; Conference date: 05-12-1993 Through 08-12-1993",

year = "1993",

language = "English (US)",

pages = "739--742",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Improvement of Breakdown Voltage and Off-State Leakage in Ge-Implanted SOI n-MOSFETs

AU - Wei, H. F.

AU - Kalkhoran, N. M.

AU - Namavar, F.

AU - Chung, J. E.

N1 - Funding Information: The authors thanks L. T. Su for supplying the masks used in device fabrication,M. J. Sherony for supplying the mobility measurement program, and the ICL staff at MIT for help in processing. This project was supported by an Analog Devices Career DevelopmentChair and DNA contract 001-90-C-0080. Funding Information: The authors thanks L. T. Su for supplying the masks used in device fabrication, M. J. Sherony for supplying the mobility measurement program, and the ICL staff at MIT for help in processing. This project was supported by an Analog Devices Career Development Chair and DNA contract 001-90-C-0080. Publisher Copyright: © 1993 IEEE

PY - 1993

Y1 - 1993

N2 - This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SO1 device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.

AB - This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SO1 device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.

UR - http://www.scopus.com/inward/record.url?scp=0027891680&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027891680&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0027891680

SP - 739

EP - 742

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

T2 - Proceedings of the 1993 IEEE International Electron Devices Meeting

Y2 - 5 December 1993 through 8 December 1993

ER -

Improvement of Breakdown Voltage and Off-State Leakage in Ge-Implanted SOI n-MOSFETs

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this