@inproceedings{9591d881d3fb4c7dbbf158071c2a8844,
title = "Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs",
abstract = "This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SOI device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.",
author = "Wei, {H. F.} and Kalkhoran, {N. M.} and F. Namavar and Chung, {J. E.}",
year = "1993",
language = "English (US)",
isbn = "0780314506",
series = "Technical Digest - International Electron Devices Meeting",
publisher = "Publ by IEEE",
pages = "739--742",
editor = "Anon",
booktitle = "Technical Digest - International Electron Devices Meeting",
note = "Proceedings of the 1993 IEEE International Electron Devices Meeting ; Conference date: 05-12-1993 Through 08-12-1993",
}