Improvement of Breakdown Voltage and Off-State Leakage in Ge-Implanted SOI n-MOSFETs

H. F. Wei, N. M. Kalkhoran, F. Namavar, J. E. Chung

Research output: Contribution to journalConference articlepeer-review

13 Scopus citations


This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SO1 device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.

Original languageEnglish (US)
Pages (from-to)739-742
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1993
Externally publishedYes
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 5 1993Dec 8 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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