Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs

H. F. Wei, N. M. Kalkhoran, F. Namavar, J. E. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SOI device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages739-742
Number of pages4
ISBN (Print)0780314506
StatePublished - 1993
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 5 1993Dec 8 1993

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period12/5/9312/8/93

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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