Improvement of Radiation Hardness in Fully-Depleted SOI N MOSFETs Using Geimplantation

H. Wei, James E. Chung, Nader M. Kalkhoran, Fereydoon Namavar, N. K. Annamalai, Walter M. Shedd

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to reduce parasitic bipolar effects. The Geimplant also serves the dual purpose of positioning most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel threshold voltage.

Original languageEnglish (US)
Pages (from-to)2291-2296
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume41
Issue number6
DOIs
StatePublished - Dec 1994

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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    Wei, H., Chung, J. E., Kalkhoran, N. M., Namavar, F., Annamalai, N. K., & Shedd, W. M. (1994). Improvement of Radiation Hardness in Fully-Depleted SOI N MOSFETs Using Geimplantation. IEEE Transactions on Nuclear Science, 41(6), 2291-2296. https://doi.org/10.1109/23.340578