This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to reduce parasitic bipolar effects. The Geimplant also serves the dual purpose of positioning most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel threshold voltage.
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering