Improvement of Radiation Hardness in Fully-Depleted SOI N MOSFETs Using Geimplantation

H. Wei; James E. Chung; Nader M. Kalkhoran; Fereydoon Namavar; N. K. Annamalai; Walter M. Shedd

doi:10.1109/23.340578

Improvement of Radiation Hardness in Fully-Depleted SOI N MOSFETs Using Geimplantation

H. Wei, James E. Chung, Nader M. Kalkhoran, Fereydoon Namavar, N. K. Annamalai, Walter M. Shedd

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to reduce parasitic bipolar effects. The Geimplant also serves the dual purpose of positioning most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel threshold voltage.

Original language	English (US)
Pages (from-to)	2291-2296
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	41
Issue number	6
DOIs	https://doi.org/10.1109/23.340578
State	Published - Dec 1994
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Improvement of Radiation Hardness in Fully-Depleted SOI N MOSFETs Using Geimplantation",

abstract = "This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to reduce parasitic bipolar effects. The Geimplant also serves the dual purpose of positioning most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel threshold voltage.",

author = "H. Wei and Chung, {James E.} and Kalkhoran, {Nader M.} and Fereydoon Namavar and Annamalai, {N. K.} and Shedd, {Walter M.}",

note = "Funding Information: This work was supported by an Analog Devices Career Development Chair and DNA contract #001-90-C-0080. The authors also thank Debbie Spring for help in manuscript format preparation.",

year = "1994",

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language = "English (US)",

volume = "41",

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AU - Wei, H.

AU - Chung, James E.

AU - Kalkhoran, Nader M.

AU - Namavar, Fereydoon

AU - Annamalai, N. K.

AU - Shedd, Walter M.

N1 - Funding Information: This work was supported by an Analog Devices Career Development Chair and DNA contract #001-90-C-0080. The authors also thank Debbie Spring for help in manuscript format preparation.

PY - 1994/12

Y1 - 1994/12

N2 - This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to reduce parasitic bipolar effects. The Geimplant also serves the dual purpose of positioning most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel threshold voltage.

AB - This work demonstrates a well-controlled technique of channel defect engineering by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to reduce parasitic bipolar effects. The Geimplant also serves the dual purpose of positioning most of the subgap states in the back interface region which retard the total dose responses of off-state leakage and front-channel threshold voltage.

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JF - IEEE Transactions on Nuclear Science

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Improvement of Radiation Hardness in Fully-Depleted SOI N MOSFETs Using Geimplantation

Abstract

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