@inproceedings{e716f253f7d745088a6388d6a8a1ec50,
title = "In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper)",
abstract = "In-situ and ex-situ ellipsometric applications in semiconductor technology are given. One such in-situ measurement is during crystal growth by MBE and MOCVD. Determined in real time are surface temperature during deposition, thickness and alloy fraction in AlGaAs Another in-situ application is for etching monitor and control, as well as in deposition of thin films. Electronic materials include dielectrics as well as semiconductors. Examplesxare silicon oxynitrides. amorphous carbon. and photoresists. These measurements can be done both in-situ and ex-situ.",
author = "Woollam, {John A.} and Snyder, {Paul G.} and Huade Yao and Johs, {Blaine D.}",
year = "1992",
doi = "10.1117/12.60459",
language = "English (US)",
isbn = "0819408395",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",
pages = "246--257",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Spectroscopic Characterization Techniques for Semiconductor Technology IV ; Conference date: 22-03-1992 Through 22-03-1992",
}