In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper)

John A. Woollam, Paul G. Snyder, Huade Yao, Blaine D. Johs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Scopus citations

Abstract

In-situ and ex-situ ellipsometric applications in semiconductor technology are given. One such in-situ measurement is during crystal growth by MBE and MOCVD. Determined in real time are surface temperature during deposition, thickness and alloy fraction in AlGaAs Another in-situ application is for etching monitor and control, as well as in deposition of thin films. Electronic materials include dielectrics as well as semiconductors. Examplesxare silicon oxynitrides. amorphous carbon. and photoresists. These measurements can be done both in-situ and ex-situ.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages246-257
Number of pages12
ISBN (Print)0819408395, 9780819408396
DOIs
StatePublished - 1992
EventSpectroscopic Characterization Techniques for Semiconductor Technology IV - Somerset, NJ, USA
Duration: Mar 22 1992Mar 22 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1678
ISSN (Print)0277-786X

Other

OtherSpectroscopic Characterization Techniques for Semiconductor Technology IV
CitySomerset, NJ, USA
Period3/22/923/22/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Woollam, J. A., Snyder, P. G., Yao, H., & Johs, B. D. (1992). In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper). In Proceedings of SPIE - The International Society for Optical Engineering (pp. 246-257). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1678). Publ by Int Soc for Optical Engineering. https://doi.org/10.1117/12.60459