In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon

N. J. Ianno; S. Ahmer; S. Pittal; John A. Woollam

In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon

N. J. Ianno, S. Ahmer, S. Pittal, John A. Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

Original language	English (US)
Pages (from-to)	535-540
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	349
State	Published - 1994
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{89ba01265be842e2b27e539dacf3db71,

title = "In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon",

abstract = "The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.",

author = "Ianno, {N. J.} and S. Ahmer and S. Pittal and Woollam, {John A.}",

year = "1994",

language = "English (US)",

volume = "349",

pages = "535--540",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

}

TY - JOUR

T1 - In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon

AU - Ianno, N. J.

AU - Ahmer, S.

AU - Pittal, S.

AU - Woollam, John A.

PY - 1994

Y1 - 1994

N2 - The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

AB - The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

UR - http://www.scopus.com/inward/record.url?scp=0028740859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028740859&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028740859

SN - 0272-9172

VL - 349

SP - 535

EP - 540

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this