In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon

N. J. Ianno, S. Ahmer, S. Pittal, John A. Woollam

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

Original languageEnglish (US)
Pages (from-to)535-540
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume349
StatePublished - Dec 1 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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