Abstract
The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 535-540 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 349 |
| State | Published - 1994 |
| Event | Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering