In-situ ellipsometry on sputtered dielectric and magneto-optic thin films

Scott Heckens, John A. Woollam

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A four-gun magnetron sputtering chamber incorporating in-situ real-time spectroscopic ellipsometric analysis was used to grow magneto-optic memory structures. Data were taken at 44 wavelengths simultaneously from 410 nm to 750 nm, allowing the study of SiC/TbFeCo SiC depositions on quartz in real time. These data were used to determine the sputter rates, optical constants, and the thicknesses of the films. The SiC data were taken at 1 min time intervals during growth, and the TbFeCo deposition was monitored continuously. Data were taken during the deposition of the entire structure without subjecting the sample to destructive analysis techniques or an oxidizing or reactive atmosphere.

Original languageEnglish (US)
Pages (from-to)65-68
Number of pages4
JournalThin Solid Films
Volume270
Issue number1-2
DOIs
StatePublished - Dec 1 1995

Keywords

  • Dielectrics
  • Ellipsometry
  • Quartz
  • Sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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