In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor

C. Krahmer; M. Philippens; M. Schubert; K. Streubel O

doi:10.1002/pssc.200564181

In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor

C. Krahmer, M. Philippens, M. Schubert, K. Streubel O

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We investigated structures grown in an industrial used multi wafer MOVPE reactor, in order to understand the influence of the growth parameters on the RAS spectra. We investigated the effect of p- and ntype doping on the RAS spectra of different materials important for optoelectronic devices such as AlGaAs and InGaAlP. Furthermore, the effect of ordering in GaInP layers on the RAS spectra has been studied. Growth parameters such as substrate misorientation, growth temperature and doping level have been varied in order to study different degrees of ordering in AlGaInP.

Original language	English (US)
Pages (from-to)	655-658
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	3
Issue number	3
DOIs	https://doi.org/10.1002/pssc.200564181
State	Published - 2006
Externally published	Yes
Event	32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany Duration: Sep 18 2005 → Sep 22 2005

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200564181

Cite this

@article{7c7a2afd820f4bb182d412f5511498fb,

title = "In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor",

abstract = "We investigated structures grown in an industrial used multi wafer MOVPE reactor, in order to understand the influence of the growth parameters on the RAS spectra. We investigated the effect of p- and ntype doping on the RAS spectra of different materials important for optoelectronic devices such as AlGaAs and InGaAlP. Furthermore, the effect of ordering in GaInP layers on the RAS spectra has been studied. Growth parameters such as substrate misorientation, growth temperature and doping level have been varied in order to study different degrees of ordering in AlGaInP.",

author = "C. Krahmer and M. Philippens and M. Schubert and {Streubel O}, K.",

year = "2006",

doi = "10.1002/pssc.200564181",

language = "English (US)",

volume = "3",

pages = "655--658",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "3",

note = "32nd International Symposium on Compound Semiconductors, ISCS-2005 ; Conference date: 18-09-2005 Through 22-09-2005",

}

TY - JOUR

T1 - In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor

AU - Krahmer, C.

AU - Philippens, M.

AU - Schubert, M.

AU - Streubel O, K.

PY - 2006

Y1 - 2006

N2 - We investigated structures grown in an industrial used multi wafer MOVPE reactor, in order to understand the influence of the growth parameters on the RAS spectra. We investigated the effect of p- and ntype doping on the RAS spectra of different materials important for optoelectronic devices such as AlGaAs and InGaAlP. Furthermore, the effect of ordering in GaInP layers on the RAS spectra has been studied. Growth parameters such as substrate misorientation, growth temperature and doping level have been varied in order to study different degrees of ordering in AlGaInP.

AB - We investigated structures grown in an industrial used multi wafer MOVPE reactor, in order to understand the influence of the growth parameters on the RAS spectra. We investigated the effect of p- and ntype doping on the RAS spectra of different materials important for optoelectronic devices such as AlGaAs and InGaAlP. Furthermore, the effect of ordering in GaInP layers on the RAS spectra has been studied. Growth parameters such as substrate misorientation, growth temperature and doping level have been varied in order to study different degrees of ordering in AlGaInP.

UR - http://www.scopus.com/inward/record.url?scp=33646166539&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646166539&partnerID=8YFLogxK

U2 - 10.1002/pssc.200564181

DO - 10.1002/pssc.200564181

M3 - Conference article

AN - SCOPUS:33646166539

SN - 1610-1634

VL - 3

SP - 655

EP - 658

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 3

T2 - 32nd International Symposium on Compound Semiconductors, ISCS-2005

Y2 - 18 September 2005 through 22 September 2005

ER -

In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this