In-situ spectroscopic ellipsometry of HgCdTe

J. D. Benson, A. B. Cornfeld, M. Martinka, K. M. Singley, Z. Derzko, P. J. Shorten, J. H. Dinan, P. R. Boyd, F. C. Wolfgram, B. Johs, P. He, John A. Woollam

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.

Original languageEnglish (US)
Pages (from-to)1406-1410
Number of pages5
JournalJournal of Electronic Materials
Volume25
Issue number8
DOIs
StatePublished - Aug 1996

Keywords

  • Molecular beam epitaxy
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Benson, J. D., Cornfeld, A. B., Martinka, M., Singley, K. M., Derzko, Z., Shorten, P. J., Dinan, J. H., Boyd, P. R., Wolfgram, F. C., Johs, B., He, P., & Woollam, J. A. (1996). In-situ spectroscopic ellipsometry of HgCdTe. Journal of Electronic Materials, 25(8), 1406-1410. https://doi.org/10.1007/BF02655042