In-situ spectroscopic ellipsometry of HgCdTe

J. D. Benson; A. B. Cornfeld; M. Martinka; K. M. Singley; Z. Derzko; P. J. Shorten; J. H. Dinan; P. R. Boyd; F. C. Wolfgram; B. Johs; P. He; John A. Woollam

doi:10.1007/BF02655042

In-situ spectroscopic ellipsometry of HgCdTe

J. D. Benson, A. B. Cornfeld, M. Martinka, K. M. Singley, Z. Derzko, P. J. Shorten, J. H. Dinan, P. R. Boyd, F. C. Wolfgram, B. Johs, P. He, John A. Woollam

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.

Original language	English (US)
Pages (from-to)	1406-1410
Number of pages	5
Journal	Journal of Electronic Materials
Volume	25
Issue number	8
DOIs	https://doi.org/10.1007/BF02655042
State	Published - Aug 1996
Externally published	Yes

Keywords

Molecular beam epitaxy
Spectroscopic ellipsometry

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02655042

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@article{bf510078939041ea8793136d29096ef8,

title = "In-situ spectroscopic ellipsometry of HgCdTe",

abstract = "An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.",

keywords = "Molecular beam epitaxy, Spectroscopic ellipsometry",

author = "Benson, {J. D.} and Cornfeld, {A. B.} and M. Martinka and Singley, {K. M.} and Z. Derzko and Shorten, {P. J.} and Dinan, {J. H.} and Boyd, {P. R.} and Wolfgram, {F. C.} and B. Johs and P. He and Woollam, {John A.}",

year = "1996",

month = aug,

doi = "10.1007/BF02655042",

language = "English (US)",

volume = "25",

pages = "1406--1410",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "8",

}

TY - JOUR

T1 - In-situ spectroscopic ellipsometry of HgCdTe

AU - Benson, J. D.

AU - Cornfeld, A. B.

AU - Martinka, M.

AU - Singley, K. M.

AU - Derzko, Z.

AU - Shorten, P. J.

AU - Dinan, J. H.

AU - Boyd, P. R.

AU - Wolfgram, F. C.

AU - Johs, B.

AU - He, P.

AU - Woollam, John A.

PY - 1996/8

Y1 - 1996/8

N2 - An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.

AB - An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.

KW - Molecular beam epitaxy

KW - Spectroscopic ellipsometry

UR - http://www.scopus.com/inward/record.url?scp=0001167931&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001167931&partnerID=8YFLogxK

U2 - 10.1007/BF02655042

DO - 10.1007/BF02655042

M3 - Article

AN - SCOPUS:0001167931

SN - 0361-5235

VL - 25

SP - 1406

EP - 1410

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

In-situ spectroscopic ellipsometry of HgCdTe

Abstract

Keywords

ASJC Scopus subject areas

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