Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition

Goh Yeow Whatt; Y. F. Lu; Z. M. Ren; T. C. Chong

doi:10.1117/12.456845

Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition

Goh Yeow Whatt, Y. F. Lu, Z. M. Ren, T. C. Chong

Research output: Contribution to journal › Conference article › peer-review

Abstract

Aluminium nitride (AlN) thin films have been grown on Si(111) and Al₂O₃(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of AlN target with assistance of nitrogen ion beam bombardment. The influence of process parameters such as laser fluence and laser repetition rate has been investigated to obtain high quality AlN films. The XRD spectra of AlN films on Si(111) and Al₂O₃(001) substrates yield full-width-half-maximum (FWHM) values of ∼2.1-1.7°. The chemical composition of the films is characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films is measured by atomic force microscope (AFM). Al₂O₃(001) substrate shows better matching with the AlN films since highest crystallite size can be achieved among the different type of substrates evaluated. Better quality AlN films (with bigger crystallite size) can be achieved with higher laser fluence of 6 J/cm² and an optimum laser repetition rate of 7 Hz.

Original language	English (US)
Pages (from-to)	241-244
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4426
DOIs	https://doi.org/10.1117/12.456845
State	Published - 2002
Externally published	Yes
Event	Second International Symposium on Laser Precision Microfabrication - Singapore, Singapore Duration: May 16 2001 → May 18 2001

Keywords

AFM
Aluminium Nitride
Laser Ablation
Thin Films
XPS
XRD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.456845

Cite this

Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition. / Whatt, Goh Yeow; Lu, Y. F.; Ren, Z. M.; Chong, T. C.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4426, 2002, p. 241-244.

Research output: Contribution to journal › Conference article › peer-review

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title = "Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition",

abstract = "Aluminium nitride (AlN) thin films have been grown on Si(111) and Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of AlN target with assistance of nitrogen ion beam bombardment. The influence of process parameters such as laser fluence and laser repetition rate has been investigated to obtain high quality AlN films. The XRD spectra of AlN films on Si(111) and Al2O3(001) substrates yield full-width-half-maximum (FWHM) values of ∼2.1-1.7°. The chemical composition of the films is characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films is measured by atomic force microscope (AFM). Al2O3(001) substrate shows better matching with the AlN films since highest crystallite size can be achieved among the different type of substrates evaluated. Better quality AlN films (with bigger crystallite size) can be achieved with higher laser fluence of 6 J/cm2 and an optimum laser repetition rate of 7 Hz.",

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T1 - Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition

AU - Whatt, Goh Yeow

AU - Lu, Y. F.

AU - Ren, Z. M.

AU - Chong, T. C.

PY - 2002

Y1 - 2002

N2 - Aluminium nitride (AlN) thin films have been grown on Si(111) and Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of AlN target with assistance of nitrogen ion beam bombardment. The influence of process parameters such as laser fluence and laser repetition rate has been investigated to obtain high quality AlN films. The XRD spectra of AlN films on Si(111) and Al2O3(001) substrates yield full-width-half-maximum (FWHM) values of ∼2.1-1.7°. The chemical composition of the films is characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films is measured by atomic force microscope (AFM). Al2O3(001) substrate shows better matching with the AlN films since highest crystallite size can be achieved among the different type of substrates evaluated. Better quality AlN films (with bigger crystallite size) can be achieved with higher laser fluence of 6 J/cm2 and an optimum laser repetition rate of 7 Hz.

AB - Aluminium nitride (AlN) thin films have been grown on Si(111) and Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of AlN target with assistance of nitrogen ion beam bombardment. The influence of process parameters such as laser fluence and laser repetition rate has been investigated to obtain high quality AlN films. The XRD spectra of AlN films on Si(111) and Al2O3(001) substrates yield full-width-half-maximum (FWHM) values of ∼2.1-1.7°. The chemical composition of the films is characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films is measured by atomic force microscope (AFM). Al2O3(001) substrate shows better matching with the AlN films since highest crystallite size can be achieved among the different type of substrates evaluated. Better quality AlN films (with bigger crystallite size) can be achieved with higher laser fluence of 6 J/cm2 and an optimum laser repetition rate of 7 Hz.

KW - AFM

KW - Aluminium Nitride

KW - Laser Ablation

KW - Thin Films

KW - XPS

KW - XRD

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Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition

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Keywords

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