Influence of nitrogen growth pressure on the ferromagnetic properties of Cr-doped AlN thin films

Jun Zhang; X. Z. Li; B. Xu; D. J. Sellmyer

doi:10.1063/1.1940131

Influence of nitrogen growth pressure on the ferromagnetic properties of Cr-doped AlN thin films

Jun Zhang, X. Z. Li, B. Xu, D. J. Sellmyer

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

We report the magnetic properties of Cr-doped AlN thin films grown by reactive magnetron sputtering under various nitrogen pressures. Ferromagnetism is observed up to the highest temperature measured, 400 K, and shows strong dependence on the Cr concentration and, especially, the nitrogen growth pressure. By varying the nitrogen pressure during film growth, the magnetic properties of the films can be changed while keeping a constant Cr concentration. The ferromagnetism is enhanced in the films that were grown at low nitrogen pressures and thus nitrogen deficient, suggesting an important role of defects in the ferromagnetism of this material.

Original language	English (US)
Article number	212504
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	21
DOIs	https://doi.org/10.1063/1.1940131
State	Published - May 23 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Influence of nitrogen growth pressure on the ferromagnetic properties of Cr-doped AlN thin films",

abstract = "We report the magnetic properties of Cr-doped AlN thin films grown by reactive magnetron sputtering under various nitrogen pressures. Ferromagnetism is observed up to the highest temperature measured, 400 K, and shows strong dependence on the Cr concentration and, especially, the nitrogen growth pressure. By varying the nitrogen pressure during film growth, the magnetic properties of the films can be changed while keeping a constant Cr concentration. The ferromagnetism is enhanced in the films that were grown at low nitrogen pressures and thus nitrogen deficient, suggesting an important role of defects in the ferromagnetism of this material.",

author = "Jun Zhang and Li, {X. Z.} and B. Xu and Sellmyer, {D. J.}",

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AU - Zhang, Jun

AU - Li, X. Z.

AU - Xu, B.

AU - Sellmyer, D. J.

N1 - Funding Information: This research is supported by ONR, NSF-MRSEC and CMRA.

PY - 2005/5/23

Y1 - 2005/5/23

N2 - We report the magnetic properties of Cr-doped AlN thin films grown by reactive magnetron sputtering under various nitrogen pressures. Ferromagnetism is observed up to the highest temperature measured, 400 K, and shows strong dependence on the Cr concentration and, especially, the nitrogen growth pressure. By varying the nitrogen pressure during film growth, the magnetic properties of the films can be changed while keeping a constant Cr concentration. The ferromagnetism is enhanced in the films that were grown at low nitrogen pressures and thus nitrogen deficient, suggesting an important role of defects in the ferromagnetism of this material.

AB - We report the magnetic properties of Cr-doped AlN thin films grown by reactive magnetron sputtering under various nitrogen pressures. Ferromagnetism is observed up to the highest temperature measured, 400 K, and shows strong dependence on the Cr concentration and, especially, the nitrogen growth pressure. By varying the nitrogen pressure during film growth, the magnetic properties of the films can be changed while keeping a constant Cr concentration. The ferromagnetism is enhanced in the films that were grown at low nitrogen pressures and thus nitrogen deficient, suggesting an important role of defects in the ferromagnetism of this material.

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Influence of nitrogen growth pressure on the ferromagnetic properties of Cr-doped AlN thin films

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