Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry

C. Bundesmann; N. Ashkenov; M. Schubert; A. Rahm; H. V. Wenckstern; E. M. Kaidashev; M. Lorenz; M. Grundmann

doi:10.1016/j.tsf.2003.11.226

Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry

C. Bundesmann, N. Ashkenov, M. Schubert, A. Rahm, H. V. Wenckstern, E. M. Kaidashev, M. Lorenz, M. Grundmann

Research output: Contribution to journal › Conference article › peer-review

35 Scopus citations

Abstract

Generalized infrared spectroscopic ellipsometry for wave numbers from 370 to 1200 cm^-1 was applied to study the anisotropic dielectric response of wurtzite-type ZnO thin films grown on r-plane sapphire. Combined wavelength-by-wavelength analysis of data measured at multiple sample in-plane orientations allows for simultaneous extraction of the dielectric function (DF) tensor, the film thickness and the respective ZnO c-axis orientation, specifically in relation to the sapphire substrate. For anisotropic materials and use of generalized ellipsometry, the correlation problem between thickness and DF does not exist. Subsequent line shape analysis of ordinary and extraordinary DFs provides complete A₁- and E₁-symmetry longitudinal and transverse optical phonon-mode and broadening parameters, together with the static dielectric constants. The epitaxial relations from the ellipsometry data analysis are (1 1 -2 0)_ZnO||(0 1 - 1 2) _sapphire and [0 0 0 1]_ZnO||[0-1 1 1]_sapphire, which was confirmed by XRD measurements.

Original language	English (US)
Pages (from-to)	161-166
Number of pages	6
Journal	Thin Solid Films
Volume	455-456
DOIs	https://doi.org/10.1016/j.tsf.2003.11.226
State	Published - May 1 2004
Externally published	Yes
Event	The 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria Duration: Jul 6 2003 → Jul 11 2003

Keywords

Epitaxial relation
Generalized infrared spectroscopic ellipsometry
Phonon modes
a-Plane ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2003.11.226

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title = "Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry",

abstract = "Generalized infrared spectroscopic ellipsometry for wave numbers from 370 to 1200 cm-1 was applied to study the anisotropic dielectric response of wurtzite-type ZnO thin films grown on r-plane sapphire. Combined wavelength-by-wavelength analysis of data measured at multiple sample in-plane orientations allows for simultaneous extraction of the dielectric function (DF) tensor, the film thickness and the respective ZnO c-axis orientation, specifically in relation to the sapphire substrate. For anisotropic materials and use of generalized ellipsometry, the correlation problem between thickness and DF does not exist. Subsequent line shape analysis of ordinary and extraordinary DFs provides complete A1- and E1-symmetry longitudinal and transverse optical phonon-mode and broadening parameters, together with the static dielectric constants. The epitaxial relations from the ellipsometry data analysis are (1 1 -2 0)ZnO||(0 1 - 1 2) sapphire and [0 0 0 1]ZnO||[0-1 1 1]sapphire, which was confirmed by XRD measurements.",

keywords = "Epitaxial relation, Generalized infrared spectroscopic ellipsometry, Phonon modes, a-Plane ZnO",

author = "C. Bundesmann and N. Ashkenov and M. Schubert and A. Rahm and Wenckstern, {H. V.} and Kaidashev, {E. M.} and M. Lorenz and M. Grundmann",

note = "Funding Information: This work was supported by the Bundesministerium f{\"u}r Bildung und Forschung within the Wachstumskern INNOCIS (FKZ 03WKI09) and by the Deutsche Forschungsgemeinschaft (Gr 1011/10-1 within SPP 1136).; The 3rd International Conference on Spectroscopic Ellipsometry ; Conference date: 06-07-2003 Through 11-07-2003",

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doi = "10.1016/j.tsf.2003.11.226",

language = "English (US)",

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pages = "161--166",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry

AU - Bundesmann, C.

AU - Ashkenov, N.

AU - Schubert, M.

AU - Rahm, A.

AU - Wenckstern, H. V.

AU - Kaidashev, E. M.

AU - Lorenz, M.

AU - Grundmann, M.

N1 - Funding Information: This work was supported by the Bundesministerium für Bildung und Forschung within the Wachstumskern INNOCIS (FKZ 03WKI09) and by the Deutsche Forschungsgemeinschaft (Gr 1011/10-1 within SPP 1136).

PY - 2004/5/1

Y1 - 2004/5/1

N2 - Generalized infrared spectroscopic ellipsometry for wave numbers from 370 to 1200 cm-1 was applied to study the anisotropic dielectric response of wurtzite-type ZnO thin films grown on r-plane sapphire. Combined wavelength-by-wavelength analysis of data measured at multiple sample in-plane orientations allows for simultaneous extraction of the dielectric function (DF) tensor, the film thickness and the respective ZnO c-axis orientation, specifically in relation to the sapphire substrate. For anisotropic materials and use of generalized ellipsometry, the correlation problem between thickness and DF does not exist. Subsequent line shape analysis of ordinary and extraordinary DFs provides complete A1- and E1-symmetry longitudinal and transverse optical phonon-mode and broadening parameters, together with the static dielectric constants. The epitaxial relations from the ellipsometry data analysis are (1 1 -2 0)ZnO||(0 1 - 1 2) sapphire and [0 0 0 1]ZnO||[0-1 1 1]sapphire, which was confirmed by XRD measurements.

AB - Generalized infrared spectroscopic ellipsometry for wave numbers from 370 to 1200 cm-1 was applied to study the anisotropic dielectric response of wurtzite-type ZnO thin films grown on r-plane sapphire. Combined wavelength-by-wavelength analysis of data measured at multiple sample in-plane orientations allows for simultaneous extraction of the dielectric function (DF) tensor, the film thickness and the respective ZnO c-axis orientation, specifically in relation to the sapphire substrate. For anisotropic materials and use of generalized ellipsometry, the correlation problem between thickness and DF does not exist. Subsequent line shape analysis of ordinary and extraordinary DFs provides complete A1- and E1-symmetry longitudinal and transverse optical phonon-mode and broadening parameters, together with the static dielectric constants. The epitaxial relations from the ellipsometry data analysis are (1 1 -2 0)ZnO||(0 1 - 1 2) sapphire and [0 0 0 1]ZnO||[0-1 1 1]sapphire, which was confirmed by XRD measurements.

KW - Epitaxial relation

KW - Generalized infrared spectroscopic ellipsometry

KW - Phonon modes

KW - a-Plane ZnO

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U2 - 10.1016/j.tsf.2003.11.226

DO - 10.1016/j.tsf.2003.11.226

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AN - SCOPUS:17144460044

SN - 0040-6090

VL - 455-456

SP - 161

EP - 166

JO - Thin Solid Films

JF - Thin Solid Films

T2 - The 3rd International Conference on Spectroscopic Ellipsometry

Y2 - 6 July 2003 through 11 July 2003

ER -

Infrared dielectric functions and crystal orientation of a-plane ZnO thin films on r-plane sapphire determined by generalized ellipsometry

Abstract

Keywords

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