Infrared dielectric functions and optical phonons of wurtzite YxAl1-xN (0 x 0.22)

N. Ben Sedrine; A. Zukauskaite; J. Birch; J. Jensen; L. Hultman; S. Schöche; M. Schubert; V. Darakchieva

doi:10.1088/0022-3727/48/41/415102

Infrared dielectric functions and optical phonons of wurtzite Y_xAl_1-xN (0 x 0.22)

N. Ben Sedrine, A. Zukauskaite, J. Birch, J. Jensen, L. Hultman, S. Schöche, M. Schubert, V. Darakchieva

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) Y_xAl_1-xN epitaxial films with 0 x 0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al₂O₃ and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E ₁(TO) and LO, and the Raman active E ₂ phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E ₁(TO), E ₂ and LO phonon frequencies, the high-frequency limit of the dielectric constant, , the static dielectric constant, , and the Born effective charge Z _B are established and discussed.

Original language	English (US)
Article number	415102
Journal	Journal of Physics D: Applied Physics
Volume	48
Issue number	41
DOIs	https://doi.org/10.1088/0022-3727/48/41/415102
State	Published - Sep 17 2015
Externally published	Yes

Keywords

YAlN
infrared dielectric function
phonons

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

Access to Document

10.1088/0022-3727/48/41/415102

Cite this

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title = "Infrared dielectric functions and optical phonons of wurtzite YxAl1-xN (0 x 0.22)",

abstract = "YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) YxAl1-xN epitaxial films with 0 x 0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E 1(TO) and LO, and the Raman active E 2 phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E 1(TO), E 2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, , the static dielectric constant, , and the Born effective charge Z B are established and discussed.",

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author = "{Ben Sedrine}, N. and A. Zukauskaite and J. Birch and J. Jensen and L. Hultman and S. Sch{\"o}che and M. Schubert and V. Darakchieva",

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T1 - Infrared dielectric functions and optical phonons of wurtzite YxAl1-xN (0 x 0.22)

AU - Ben Sedrine, N.

AU - Zukauskaite, A.

AU - Birch, J.

AU - Jensen, J.

AU - Hultman, L.

AU - Schöche, S.

AU - Schubert, M.

AU - Darakchieva, V.

PY - 2015/9/17

Y1 - 2015/9/17

N2 - YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) YxAl1-xN epitaxial films with 0 x 0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E 1(TO) and LO, and the Raman active E 2 phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E 1(TO), E 2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, , the static dielectric constant, , and the Born effective charge Z B are established and discussed.

AB - YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) YxAl1-xN epitaxial films with 0 x 0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E 1(TO) and LO, and the Raman active E 2 phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E 1(TO), E 2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, , the static dielectric constant, , and the Born effective charge Z B are established and discussed.

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