Infrared dielectric functions and optical phonons of wurtzite YxAl1-xN (0 x 0.22)

N. Ben Sedrine, A. Zukauskaite, J. Birch, J. Jensen, L. Hultman, S. Schöche, M. Schubert, V. Darakchieva

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


YAlN is a new member of the group-III nitride family with potential for applications in next generation piezoelectric and light emitting devices. We report the infrared dielectric functions and optical phonons of wurtzite (0001) YxAl1-xN epitaxial films with 0 x 0.22. The films are grown by magnetron sputtering epitaxy on c-plane Al2O3 and their phonon properties are investigated using infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The infrared-active E 1(TO) and LO, and the Raman active E 2 phonons are found to exhibit one-mode behavior, which is discussed in the framework of the MREI model. The compositional dependencies of the E 1(TO), E 2 and LO phonon frequencies, the high-frequency limit of the dielectric constant, , the static dielectric constant, , and the Born effective charge Z B are established and discussed.

Original languageEnglish (US)
Article number415102
JournalJournal of Physics D: Applied Physics
Issue number41
StatePublished - Sep 17 2015


  • YAlN
  • infrared dielectric function
  • phonons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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