Abstract
A study was performed on the phonon modes and infrared dielectric functions of high-quality ZnO thin films. The pulsed laser deposition technique was used to deposit the ZnO films on c-plane sapphire substrates and were investigated by high-resolution transmission electron microscopy, high-resolution x-ray diffraction and Rutherford backscattering experiments. The accurate long-wavelength dielectric constant limits of the films were also obtained and were compared with near-band-gap index-of-refraction data upon the Lyddane-Sachs-Teller relation for both film and bulk samples. It was found that the phonon modes of the film were highly consistent with those of the bulk sample.
Original language | English (US) |
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Pages (from-to) | 126-133 |
Number of pages | 8 |
Journal | Journal of Applied Physics |
Volume | 93 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2003 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)