Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D. J. As, J. Off, B. Kuhn, F. Scholz, J. A. Woollam

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.

Original languageEnglish (US)
Pages (from-to)437-440
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number2
DOIs
StatePublished - Nov 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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