Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

M. Schubert; A. Kasic; S. Einfeldt; D. Hommel; U. Köhler; D. J. As; J. Off; B. Kuhn; F. Scholz; J. A. Woollam

doi:10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E

Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

M. Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D. J. As, J. Off, B. Kuhn, F. Scholz, J. A. Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.

Original language	English (US)
Pages (from-to)	437-440
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	228
Issue number	2
DOIs	https://doi.org/10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E
State	Published - Nov 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E

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Schubert, M., Kasic, A., Einfeldt, S., Hommel, D., Köhler, U., As, D. J., Off, J., Kuhn, B., Scholz, F., & Woollam, J. A. (2001). Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications. Physica Status Solidi (B) Basic Research, 228(2), 437-440. https://doi.org/10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E

Schubert, M, Kasic, A, Einfeldt, S, Hommel, D, Köhler, U, As, DJ, Off, J, Kuhn, B, Scholz, F & Woollam, JA 2001, 'Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications', Physica Status Solidi (B) Basic Research, vol. 228, no. 2, pp. 437-440. https://doi.org/10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E

@article{980ea75796974da5bd2094694bd7c001,

title = "Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications",

abstract = "We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.",

author = "M. Schubert and A. Kasic and S. Einfeldt and D. Hommel and U. K{\"o}hler and As, {D. J.} and J. Off and B. Kuhn and F. Scholz and Woollam, {J. A.}",

year = "2001",

month = nov,

doi = "10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E",

language = "English (US)",

volume = "228",

pages = "437--440",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

number = "2",

}

TY - JOUR

T1 - Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

AU - Schubert, M.

AU - Kasic, A.

AU - Einfeldt, S.

AU - Hommel, D.

AU - Köhler, U.

AU - As, D. J.

AU - Off, J.

AU - Kuhn, B.

AU - Scholz, F.

AU - Woollam, J. A.

PY - 2001/11

Y1 - 2001/11

N2 - We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.

AB - We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=0001604875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001604875&partnerID=8YFLogxK

U2 - 10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E

DO - 10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E

M3 - Article

AN - SCOPUS:0001604875

SN - 0370-1972

VL - 228

SP - 437

EP - 440

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 2

ER -

Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

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