We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physica Status Solidi (B) Basic Research|
|State||Published - Nov 1 2001|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics