@inproceedings{7a9e4d379e5a4a0ca857bd526eb0cd32,
title = "Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN",
abstract = "We apply infrared spectroscopic ellipsometry (IRSE) in combination with near-infrared to vacuum-ultraviolet ellipsometry to study the concentration and mobility of holes in a set of Mg-doped In-polar InN samples of different Mg-concentrations. P-type behavior is found in the IRSE spectra for Mg-concentrations between 1×10 18cm -3 and 3×10 19 cm -3. The free-charge carrier parameters are determined using a parameterized model that accounts for phonon-plasmon coupling. From the NIR-VUV data information about layer thicknesses, surface roughness, and structural InN layer properties are extracted and related to the IRSE results.",
author = "Stefan Sch{\"o}che and Tino Hofmann and Sedrine, {Nebiha Ben} and Vanya Darakchieva and Xinqiang Wang and Akihiko Yoshikawa and Mathias Schubert",
year = "2012",
doi = "10.1557/opl.2012.86",
language = "English (US)",
isbn = "9781605113739",
series = "Materials Research Society Symposium Proceedings",
pages = "199--204",
booktitle = "Compound Semiconductors for Generating, Emitting and Manipulating Energy",
note = "2011 MRS Fall Meeting ; Conference date: 28-11-2011 Through 02-12-2011",
}