Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Stefan Schöche, Tino Hofmann, Nebiha Ben Sedrine, Vanya Darakchieva, Xinqiang Wang, Akihiko Yoshikawa, Mathias Schubert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We apply infrared spectroscopic ellipsometry (IRSE) in combination with near-infrared to vacuum-ultraviolet ellipsometry to study the concentration and mobility of holes in a set of Mg-doped In-polar InN samples of different Mg-concentrations. P-type behavior is found in the IRSE spectra for Mg-concentrations between 1×10 18cm -3 and 3×10 19 cm -3. The free-charge carrier parameters are determined using a parameterized model that accounts for phonon-plasmon coupling. From the NIR-VUV data information about layer thicknesses, surface roughness, and structural InN layer properties are extracted and related to the IRSE results.

Original languageEnglish (US)
Title of host publicationCompound Semiconductors for Generating, Emitting and Manipulating Energy
Pages199-204
Number of pages6
DOIs
Publication statusPublished - Aug 20 2012
Event2011 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2011Dec 2 2011

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1396
ISSN (Print)0272-9172

Other

Other2011 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/1112/2/11

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Schöche, S., Hofmann, T., Sedrine, N. B., Darakchieva, V., Wang, X., Yoshikawa, A., & Schubert, M. (2012). Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN. In Compound Semiconductors for Generating, Emitting and Manipulating Energy (pp. 199-204). (Materials Research Society Symposium Proceedings; Vol. 1396). https://doi.org/10.1557/opl.2012.86