Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties

V. Darakchieva; P. P. Paskov; E. Valcheva; T. Paskova; M. Schubert; C. Bundesmann; H. Lu; W. J. Schaff; B. Monemar

doi:10.1016/j.spmi.2004.09.014

Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties

V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, M. Schubert, C. Bundesmann, H. Lu, W. J. Schaff, B. Monemar

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

The vibrational properties of InN films with different strain have been studied using Infrared ellipsometry and Raman scattering spectroscopy. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and the strain-free frequencies of the InN E₁(TO) and E₂ modes. The LO phonons and their coupling to the free-carrier plasmon excitations are also discussed in relation to the carrier concentration in the films.

Original language	English (US)
Pages (from-to)	573-580
Number of pages	8
Journal	Superlattices and Microstructures
Volume	36
Issue number	4-6
DOIs	https://doi.org/10.1016/j.spmi.2004.09.014
State	Published - Oct 2004
Externally published	Yes
Event	European Materials Research Society 2004, Symposium L. InN - Strasbourg, France Duration: May 24 2004 → May 28 2004

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2004.09.014

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title = "Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties",

abstract = "The vibrational properties of InN films with different strain have been studied using Infrared ellipsometry and Raman scattering spectroscopy. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and the strain-free frequencies of the InN E1(TO) and E2 modes. The LO phonons and their coupling to the free-carrier plasmon excitations are also discussed in relation to the carrier concentration in the films.",

author = "V. Darakchieva and Paskov, {P. P.} and E. Valcheva and T. Paskova and M. Schubert and C. Bundesmann and H. Lu and Schaff, {W. J.} and B. Monemar",

year = "2004",

month = oct,

doi = "10.1016/j.spmi.2004.09.014",

language = "English (US)",

volume = "36",

pages = "573--580",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4-6",

note = "European Materials Research Society 2004, Symposium L. InN ; Conference date: 24-05-2004 Through 28-05-2004",

}

TY - JOUR

T1 - Infrared ellipsometry and Raman studies of hexagonal InN films

T2 - European Materials Research Society 2004, Symposium L. InN

AU - Darakchieva, V.

AU - Paskov, P. P.

AU - Valcheva, E.

AU - Paskova, T.

AU - Schubert, M.

AU - Bundesmann, C.

AU - Lu, H.

AU - Schaff, W. J.

AU - Monemar, B.

PY - 2004/10

Y1 - 2004/10

N2 - The vibrational properties of InN films with different strain have been studied using Infrared ellipsometry and Raman scattering spectroscopy. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and the strain-free frequencies of the InN E1(TO) and E2 modes. The LO phonons and their coupling to the free-carrier plasmon excitations are also discussed in relation to the carrier concentration in the films.

AB - The vibrational properties of InN films with different strain have been studied using Infrared ellipsometry and Raman scattering spectroscopy. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and the strain-free frequencies of the InN E1(TO) and E2 modes. The LO phonons and their coupling to the free-carrier plasmon excitations are also discussed in relation to the carrier concentration in the films.

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U2 - 10.1016/j.spmi.2004.09.014

DO - 10.1016/j.spmi.2004.09.014

M3 - Conference article

AN - SCOPUS:9944244475

SN - 0749-6036

VL - 36

SP - 573

EP - 580

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-6

Y2 - 24 May 2004 through 28 May 2004

ER -

Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties

Abstract

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