Infrared ellipsometry on hexagonal and cubic boron nitride thin films

E. Franke; H. Neumann; M. Schubert; T. E. Tiwald; J. A. Woollam; J. Hahn

doi:10.1063/1.118655

Infrared ellipsometry on hexagonal and cubic boron nitride thin films

E. Franke, H. Neumann, M. Schubert, T. E. Tiwald, J. A. Woollam, J. Hahn

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm^-1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach.

Original language	English (US)
Pages (from-to)	1668-1670
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	13
DOIs	https://doi.org/10.1063/1.118655
State	Published - Mar 31 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm-1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach.",

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AU - Franke, E.

AU - Neumann, H.

AU - Schubert, M.

AU - Tiwald, T. E.

AU - Woollam, J. A.

AU - Hahn, J.

PY - 1997/3/31

Y1 - 1997/3/31

N2 - Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm-1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach.

AB - Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm-1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach.

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Infrared ellipsometry on hexagonal and cubic boron nitride thin films

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