Infrared emittance modulation devices using electrochromic crystalline tungsten oxide, polymer conductor, and nickel oxide

Chris Trimble; Michael DeVries; Jeffrey S. Hale; Daniel W. Thompson; Thomas E. Tiwald; John A. Woollam

doi:10.1016/S0040-6090(99)00439-3

Infrared emittance modulation devices using electrochromic crystalline tungsten oxide, polymer conductor, and nickel oxide

Chris Trimble, Michael DeVries, Jeffrey S. Hale, Daniel W. Thompson, Thomas E. Tiwald, John A. Woollam

Electrical & Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

32 Scopus citations

Abstract

A prototypical small area electrochromic device was fabricated, and emissivity was measured from 1 to 30 microns. The devices show change in emissivity from about 0.60 to about 0.68, that is a total modulation of 13%. The emittance performance was calculated, based on the reflectivity modulation. One difference between these devices and the more frequently explored visible light transmission devices is the utilization of crystalline tungsten oxide instead of highly disordered amorphous tungsten oxide. The crystalline tungsten oxide and nickel oxide charge storage films are characterized by IR transmission/reflection, and spectroscopic ellipsometry. A theoretical model has been developed which describes the device performance to within 10% of experimental results.

Original language	English (US)
Pages (from-to)	26-34
Number of pages	9
Journal	Thin Solid Films
Volume	355
DOIs	https://doi.org/10.1016/S0040-6090(99)00439-3
State	Published - Nov 1 1999
Event	Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films - San Diego, CA, USA Duration: Apr 12 1999 → Apr 15 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(99)00439-3

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title = "Infrared emittance modulation devices using electrochromic crystalline tungsten oxide, polymer conductor, and nickel oxide",

abstract = "A prototypical small area electrochromic device was fabricated, and emissivity was measured from 1 to 30 microns. The devices show change in emissivity from about 0.60 to about 0.68, that is a total modulation of 13%. The emittance performance was calculated, based on the reflectivity modulation. One difference between these devices and the more frequently explored visible light transmission devices is the utilization of crystalline tungsten oxide instead of highly disordered amorphous tungsten oxide. The crystalline tungsten oxide and nickel oxide charge storage films are characterized by IR transmission/reflection, and spectroscopic ellipsometry. A theoretical model has been developed which describes the device performance to within 10% of experimental results.",

author = "Chris Trimble and Michael DeVries and Hale, {Jeffrey S.} and Thompson, {Daniel W.} and Tiwald, {Thomas E.} and Woollam, {John A.}",

note = "Funding Information: This research is supported by the Ballistic Missile Defense Organization, Contract number DASG60-98-C-0054. Also The NASA John H. Glenn Research Center Grant Number: NAG3-2219.; Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films ; Conference date: 12-04-1999 Through 15-04-1999",

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doi = "10.1016/S0040-6090(99)00439-3",

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T1 - Infrared emittance modulation devices using electrochromic crystalline tungsten oxide, polymer conductor, and nickel oxide

AU - Trimble, Chris

AU - DeVries, Michael

AU - Hale, Jeffrey S.

AU - Thompson, Daniel W.

AU - Tiwald, Thomas E.

AU - Woollam, John A.

N1 - Funding Information: This research is supported by the Ballistic Missile Defense Organization, Contract number DASG60-98-C-0054. Also The NASA John H. Glenn Research Center Grant Number: NAG3-2219.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - A prototypical small area electrochromic device was fabricated, and emissivity was measured from 1 to 30 microns. The devices show change in emissivity from about 0.60 to about 0.68, that is a total modulation of 13%. The emittance performance was calculated, based on the reflectivity modulation. One difference between these devices and the more frequently explored visible light transmission devices is the utilization of crystalline tungsten oxide instead of highly disordered amorphous tungsten oxide. The crystalline tungsten oxide and nickel oxide charge storage films are characterized by IR transmission/reflection, and spectroscopic ellipsometry. A theoretical model has been developed which describes the device performance to within 10% of experimental results.

AB - A prototypical small area electrochromic device was fabricated, and emissivity was measured from 1 to 30 microns. The devices show change in emissivity from about 0.60 to about 0.68, that is a total modulation of 13%. The emittance performance was calculated, based on the reflectivity modulation. One difference between these devices and the more frequently explored visible light transmission devices is the utilization of crystalline tungsten oxide instead of highly disordered amorphous tungsten oxide. The crystalline tungsten oxide and nickel oxide charge storage films are characterized by IR transmission/reflection, and spectroscopic ellipsometry. A theoretical model has been developed which describes the device performance to within 10% of experimental results.

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SN - 0040-6090

VL - 355

SP - 26

EP - 34

JO - Thin Solid Films

JF - Thin Solid Films

T2 - Proceedings of the 1999 26th International Conference on Metallurgic Coatings and Thin Films

Y2 - 12 April 1999 through 15 April 1999

ER -

Infrared emittance modulation devices using electrochromic crystalline tungsten oxide, polymer conductor, and nickel oxide

Abstract

ASJC Scopus subject areas

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