Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb

P. G. Snyder; T. E. Tiwald; D. W. Thompson; N. J. Ianno; J. A. Woollam; M. G. Mauk; Z. A. Shellenbarger

doi:10.1016/S0040-6090(97)00974-7

Infrared free carrier response of In_0.15Ga_0.85As_0.17Sb_0.83 epilayers on GaSb

P. G. Snyder, T. E. Tiwald, D. W. Thompson, N. J. Ianno, J. A. Woollam, M. G. Mauk, Z. A. Shellenbarger

Electrical & Computer Engineering

Research output: Contribution to journal › Article

7 Scopus citations

Abstract

Fourier transform infrared variable angle spectroscopic ellipsometry (0.089-0.620 eV) was used to investigate undoped and Te doped epilayers of In_0.15Ga_0.85As_0.17Sb_0.83 on (100) GaSb substrates. The onset of absorption at the bandgap (0.55 eV) was observed in the data for the undoped epilayer. The data below the bandgap for the doped epilayer displayed free carrier characteristics as well as interference effects. They were simulated by including a Drude term in the epilayer and substrate dielectric functions of a multilayer model. This model produced a good fit to the data and provided the epilayer thickness and free carrier plasma frequency. SE measurements above the gap (0.75-5.4 eV) showed only minor effects due to doping.

Original language	English (US)
Pages (from-to)	667-670
Number of pages	4
Journal	Thin Solid Films
Volume	313-314
DOIs	https://doi.org/10.1016/S0040-6090(97)00974-7
State	Published - Feb 13 1998

Keywords

Ellipsometry
Free carrier response
Infrared dielectric function

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Snyder, P. G., Tiwald, T. E., Thompson, D. W., Ianno, N. J., Woollam, J. A., Mauk, M. G., & Shellenbarger, Z. A. (1998). Infrared free carrier response of In_0.15Ga_0.85As_0.17Sb_0.83 epilayers on GaSb. Thin Solid Films, 313-314, 667-670. https://doi.org/10.1016/S0040-6090(97)00974-7

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title = "Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb",

abstract = "Fourier transform infrared variable angle spectroscopic ellipsometry (0.089-0.620 eV) was used to investigate undoped and Te doped epilayers of In0.15Ga0.85As0.17Sb0.83 on (100) GaSb substrates. The onset of absorption at the bandgap (0.55 eV) was observed in the data for the undoped epilayer. The data below the bandgap for the doped epilayer displayed free carrier characteristics as well as interference effects. They were simulated by including a Drude term in the epilayer and substrate dielectric functions of a multilayer model. This model produced a good fit to the data and provided the epilayer thickness and free carrier plasma frequency. SE measurements above the gap (0.75-5.4 eV) showed only minor effects due to doping.",

keywords = "Ellipsometry, Free carrier response, Infrared dielectric function",

author = "Snyder, {P. G.} and Tiwald, {T. E.} and Thompson, {D. W.} and Ianno, {N. J.} and Woollam, {J. A.} and Mauk, {M. G.} and Shellenbarger, {Z. A.}",

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T1 - Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb

AU - Snyder, P. G.

AU - Tiwald, T. E.

AU - Thompson, D. W.

AU - Ianno, N. J.

AU - Woollam, J. A.

AU - Mauk, M. G.

AU - Shellenbarger, Z. A.

PY - 1998/2/13

Y1 - 1998/2/13

N2 - Fourier transform infrared variable angle spectroscopic ellipsometry (0.089-0.620 eV) was used to investigate undoped and Te doped epilayers of In0.15Ga0.85As0.17Sb0.83 on (100) GaSb substrates. The onset of absorption at the bandgap (0.55 eV) was observed in the data for the undoped epilayer. The data below the bandgap for the doped epilayer displayed free carrier characteristics as well as interference effects. They were simulated by including a Drude term in the epilayer and substrate dielectric functions of a multilayer model. This model produced a good fit to the data and provided the epilayer thickness and free carrier plasma frequency. SE measurements above the gap (0.75-5.4 eV) showed only minor effects due to doping.

AB - Fourier transform infrared variable angle spectroscopic ellipsometry (0.089-0.620 eV) was used to investigate undoped and Te doped epilayers of In0.15Ga0.85As0.17Sb0.83 on (100) GaSb substrates. The onset of absorption at the bandgap (0.55 eV) was observed in the data for the undoped epilayer. The data below the bandgap for the doped epilayer displayed free carrier characteristics as well as interference effects. They were simulated by including a Drude term in the epilayer and substrate dielectric functions of a multilayer model. This model produced a good fit to the data and provided the epilayer thickness and free carrier plasma frequency. SE measurements above the gap (0.75-5.4 eV) showed only minor effects due to doping.

KW - Ellipsometry

KW - Free carrier response

KW - Infrared dielectric function

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