Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs

S. Zangooie, M. Schubert, D. W. Thompson, J. A. Woollam

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

Spectroscopic ellipsometry is used to measure the dielectric function of heavily doped p-type GaAs for wave numbers from 100 to 2000 cm-1. Due to partial filling of the heavy-and light-hole valence bands, heavy holes as well as light holes form a multiple-component plasma coupled with longitudinal optical phonons. Line-shape analysis of the infrared response allows differentiating between light- and heavy-hole contributions to the carrier plasma, and the results observed suggest nonparabolicity effects of the heavy- and light-hole valence bands in GaAs.

Original languageEnglish (US)
Pages (from-to)937-939
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number7
DOIs
StatePublished - Feb 12 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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