Abstract
Spectroscopic ellipsometry is used to measure the dielectric function of heavily doped p-type GaAs for wave numbers from 100 to 2000 cm-1. Due to partial filling of the heavy-and light-hole valence bands, heavy holes as well as light holes form a multiple-component plasma coupled with longitudinal optical phonons. Line-shape analysis of the infrared response allows differentiating between light- and heavy-hole contributions to the carrier plasma, and the results observed suggest nonparabolicity effects of the heavy- and light-hole valence bands in GaAs.
Original language | English (US) |
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Pages (from-to) | 937-939 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 78 |
Issue number | 7 |
DOIs | |
State | Published - Feb 12 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)