InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma

Jae E. Oh; Joel D. Lamb; Paul G. Snyder; John A. Woollam; David C. Liu

doi:10.1016/0038-1101(86)90017-1

InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma

Jae E. Oh, Joel D. Lamb, Paul G. Snyder, John A. Woollam, David C. Liu

Electrical & Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The interfacial electronic properties of diamondlike carbon on both n-InP and p-InP have been studied. These measurements include conductance and capacitance versus frequency or bias voltage for metal-insulator-semiconductor structures. Carbon was deposited by both ion-beam sputtering, and from an rf plasma. We find that interface electronic state densities range from 10¹¹ to 10¹³ states/eV cm², depending on sample and preparation procedures. Normalized conductance versus frequency data show an unusual behavior, namely, two loss peaks having greatly differing voltage dependencies. We speculate on the physical origins of the two peaks.

Original language	English (US)
Pages (from-to)	933-940
Number of pages	8
Journal	Solid State Electronics
Volume	29
Issue number	9
DOIs	https://doi.org/10.1016/0038-1101(86)90017-1
State	Published - Sep 1986

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma",

abstract = "The interfacial electronic properties of diamondlike carbon on both n-InP and p-InP have been studied. These measurements include conductance and capacitance versus frequency or bias voltage for metal-insulator-semiconductor structures. Carbon was deposited by both ion-beam sputtering, and from an rf plasma. We find that interface electronic state densities range from 1011 to 1013 states/eV cm2, depending on sample and preparation procedures. Normalized conductance versus frequency data show an unusual behavior, namely, two loss peaks having greatly differing voltage dependencies. We speculate on the physical origins of the two peaks.",

author = "Oh, {Jae E.} and Lamb, {Joel D.} and Snyder, {Paul G.} and Woollam, {John A.} and Liu, {David C.}",

note = "Funding Information: tResearch supported by NASA Lewis Grant NAG-3-154.",

year = "1986",

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AU - Oh, Jae E.

AU - Lamb, Joel D.

AU - Snyder, Paul G.

AU - Woollam, John A.

AU - Liu, David C.

N1 - Funding Information: tResearch supported by NASA Lewis Grant NAG-3-154.

PY - 1986/9

Y1 - 1986/9

N2 - The interfacial electronic properties of diamondlike carbon on both n-InP and p-InP have been studied. These measurements include conductance and capacitance versus frequency or bias voltage for metal-insulator-semiconductor structures. Carbon was deposited by both ion-beam sputtering, and from an rf plasma. We find that interface electronic state densities range from 1011 to 1013 states/eV cm2, depending on sample and preparation procedures. Normalized conductance versus frequency data show an unusual behavior, namely, two loss peaks having greatly differing voltage dependencies. We speculate on the physical origins of the two peaks.

AB - The interfacial electronic properties of diamondlike carbon on both n-InP and p-InP have been studied. These measurements include conductance and capacitance versus frequency or bias voltage for metal-insulator-semiconductor structures. Carbon was deposited by both ion-beam sputtering, and from an rf plasma. We find that interface electronic state densities range from 1011 to 1013 states/eV cm2, depending on sample and preparation procedures. Normalized conductance versus frequency data show an unusual behavior, namely, two loss peaks having greatly differing voltage dependencies. We speculate on the physical origins of the two peaks.

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InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma

Abstract

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