The interfacial electronic properties of diamondlike carbon on both n-InP and p-InP have been studied. These measurements include conductance and capacitance versus frequency or bias voltage for metal-insulator-semiconductor structures. Carbon was deposited by both ion-beam sputtering, and from an rf plasma. We find that interface electronic state densities range from 1011 to 1013 states/eV cm2, depending on sample and preparation procedures. Normalized conductance versus frequency data show an unusual behavior, namely, two loss peaks having greatly differing voltage dependencies. We speculate on the physical origins of the two peaks.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry