InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma

Jae E. Oh, Joel D. Lamb, Paul G. Snyder, John A. Woollam, David C. Liu

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The interfacial electronic properties of diamondlike carbon on both n-InP and p-InP have been studied. These measurements include conductance and capacitance versus frequency or bias voltage for metal-insulator-semiconductor structures. Carbon was deposited by both ion-beam sputtering, and from an rf plasma. We find that interface electronic state densities range from 1011 to 1013 states/eV cm2, depending on sample and preparation procedures. Normalized conductance versus frequency data show an unusual behavior, namely, two loss peaks having greatly differing voltage dependencies. We speculate on the physical origins of the two peaks.

Original languageEnglish (US)
Pages (from-to)933-940
Number of pages8
JournalSolid State Electronics
Volume29
Issue number9
DOIs
StatePublished - Sep 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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