Integrated temperature sensor in Er-doped silicon

Adrian K. Kewell; Graham T. Reed; Fereydoon Namavar

doi:10.1016/S0924-4247(97)01699-3

Integrated temperature sensor in Er-doped silicon

Adrian K. Kewell, Graham T. Reed, Fereydoon Namavar

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A temperature sensor is described which is compatible with silicon microelectronics and operates over the range 40-150 K. The measurement principle is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Experimental results are given as proof of principle. The device could be realized using techniques from standard silicon electronics fabrication processes.

Original language	English (US)
Pages (from-to)	160-164
Number of pages	5
Journal	Sensors and Actuators, A: Physical
Volume	65
Issue number	2-3
DOIs	https://doi.org/10.1016/S0924-4247(97)01699-3
State	Published - Mar 15 1998
Externally published	Yes

Keywords

Er-doped silicon
Luminescence
Micromachining
Temperature sensors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/S0924-4247(97)01699-3

Cite this

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title = "Integrated temperature sensor in Er-doped silicon",

abstract = "A temperature sensor is described which is compatible with silicon microelectronics and operates over the range 40-150 K. The measurement principle is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Experimental results are given as proof of principle. The device could be realized using techniques from standard silicon electronics fabrication processes.",

keywords = "Er-doped silicon, Luminescence, Micromachining, Temperature sensors",

author = "Kewell, {Adrian K.} and Reed, {Graham T.} and Fereydoon Namavar",

note = "Funding Information: A.K. gratefully acknowledges the financial support received from the EPSRC (UK) and Bookham Technology. The authors would like to thank Ann Marie Cremins for assistance with implantation and Dr K. Homewood for useful discussions concerning the lifetime measurements.",

year = "1998",

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doi = "10.1016/S0924-4247(97)01699-3",

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pages = "160--164",

journal = "Sensors and Actuators, A: Physical",

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T1 - Integrated temperature sensor in Er-doped silicon

AU - Kewell, Adrian K.

AU - Reed, Graham T.

AU - Namavar, Fereydoon

N1 - Funding Information: A.K. gratefully acknowledges the financial support received from the EPSRC (UK) and Bookham Technology. The authors would like to thank Ann Marie Cremins for assistance with implantation and Dr K. Homewood for useful discussions concerning the lifetime measurements.

PY - 1998/3/15

Y1 - 1998/3/15

N2 - A temperature sensor is described which is compatible with silicon microelectronics and operates over the range 40-150 K. The measurement principle is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Experimental results are given as proof of principle. The device could be realized using techniques from standard silicon electronics fabrication processes.

AB - A temperature sensor is described which is compatible with silicon microelectronics and operates over the range 40-150 K. The measurement principle is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Experimental results are given as proof of principle. The device could be realized using techniques from standard silicon electronics fabrication processes.

KW - Er-doped silicon

KW - Luminescence

KW - Micromachining

KW - Temperature sensors

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DO - 10.1016/S0924-4247(97)01699-3

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VL - 65

SP - 160

EP - 164

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

IS - 2-3

ER -

Integrated temperature sensor in Er-doped silicon

Abstract

Keywords

ASJC Scopus subject areas

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