Abstract
Amorphous Ta93Cu7 and Ta8 0Cu20 alloy films are prepared by co-sputtering of pure Ta and pure Cu targets with a rotating sample holder table. To investigate the possible application of these materials as diffusion barriers for the Au-GaAs system, vacuum annealings are made in the temperature range from 200 to 800°C. Resistivity change, x-ray diffraction, and Auger electron spectroscopy measurements are performed to find the chemical and metallurgical stabilities of these materials in this system. The reaction temperature for TaxCu1-x in contact with GaAs lies between 500 and 700°C. For Au in contact with TaxCu1-x the reaction occurs at about 600°C. Amorphous Ta93Cu7 shows different interdiffusion characteristics with surrounding elements than does Ta80Cu20.
Original language | English (US) |
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Pages (from-to) | 1722-1724 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 50 |
Issue number | 24 |
DOIs | |
State | Published - 1987 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)