Amorphous Ta93Cu7 and Ta8 0Cu20 alloy films are prepared by co-sputtering of pure Ta and pure Cu targets with a rotating sample holder table. To investigate the possible application of these materials as diffusion barriers for the Au-GaAs system, vacuum annealings are made in the temperature range from 200 to 800°C. Resistivity change, x-ray diffraction, and Auger electron spectroscopy measurements are performed to find the chemical and metallurgical stabilities of these materials in this system. The reaction temperature for TaxCu1-x in contact with GaAs lies between 500 and 700°C. For Au in contact with TaxCu1-x the reaction occurs at about 600°C. Amorphous Ta93Cu7 shows different interdiffusion characteristics with surrounding elements than does Ta80Cu20.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)