Interactions of amorphous TaxCu1-x (x=0.93 and 0.80) alloy films with Au overlayers and GaAs substrates

Jae E. Oh, John A. Woollam, John J. Pouch

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Abstract

Amorphous Ta93Cu7 and Ta8 0Cu20 alloy films are prepared by co-sputtering of pure Ta and pure Cu targets with a rotating sample holder table. To investigate the possible application of these materials as diffusion barriers for the Au-GaAs system, vacuum annealings are made in the temperature range from 200 to 800°C. Resistivity change, x-ray diffraction, and Auger electron spectroscopy measurements are performed to find the chemical and metallurgical stabilities of these materials in this system. The reaction temperature for TaxCu1-x in contact with GaAs lies between 500 and 700°C. For Au in contact with TaxCu1-x the reaction occurs at about 600°C. Amorphous Ta93Cu7 shows different interdiffusion characteristics with surrounding elements than does Ta80Cu20.

Original languageEnglish (US)
Pages (from-to)1722-1724
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number24
DOIs
Publication statusPublished - Dec 1 1987

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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