Interband transitions in [001]-(GaP)1(InP)m superlattices

M. Schubert; H. Schmidt; J. Šik; T. Hofmann; V. Gottschalch; W. Grill; G. Böhm; G. Wagner

doi:10.1016/S0921-5107(01)00865-0

Interband transitions in [001]-(GaP)₁(InP)_m superlattices

M. Schubert, H. Schmidt, J. Šik, T. Hofmann, V. Gottschalch, W. Grill, G. Böhm, G. Wagner

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We study the optical interband transitions of [001]-(GaP) ₁(InP)_m monolayer superlattices on (001) InP for m=5, 14, 27 and 51 using spectroscopic ellipsometry for photon energies from 1 to 6 eV. Samples were grown by metal-organic vapor phase epitaxy. We determine the InP-like E₀, E₀+Δ₀, E₁, E ₁+Δ₁, and E₂ transitions from lineshape analysis of the pseudodielectric function 〈ε〉. The E₀ and E₀+Δ₀ interband transitions depend on m due to effective alloying, strain, and symmetry reduction upon the superlattice period. Empirical pseudopotential calculations for superlattices with m=1,⋯,14 confirm the observed dependence of the E₀ transition on the superlattice period. We further discuss our theoretical findings of type-II alignment for electrons and holes, which should be located within the GaP- and InP monolayers, respectively.

Original language	English (US)
Pages (from-to)	125-128
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	88
Issue number	2-3
DOIs	https://doi.org/10.1016/S0921-5107(01)00865-0
State	Published - Jan 16 2002
Externally published	Yes

Keywords

Band structure
Ellipsometry
GaP-InP-superlattice
Ordering

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/S0921-5107(01)00865-0

Cite this

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title = "Interband transitions in [001]-(GaP)1(InP)m superlattices",

abstract = "We study the optical interband transitions of [001]-(GaP) 1(InP)m monolayer superlattices on (001) InP for m=5, 14, 27 and 51 using spectroscopic ellipsometry for photon energies from 1 to 6 eV. Samples were grown by metal-organic vapor phase epitaxy. We determine the InP-like E0, E0+Δ0, E1, E 1+Δ1, and E2 transitions from lineshape analysis of the pseudodielectric function 〈ε〉. The E0 and E0+Δ0 interband transitions depend on m due to effective alloying, strain, and symmetry reduction upon the superlattice period. Empirical pseudopotential calculations for superlattices with m=1,⋯,14 confirm the observed dependence of the E0 transition on the superlattice period. We further discuss our theoretical findings of type-II alignment for electrons and holes, which should be located within the GaP- and InP monolayers, respectively.",

keywords = "Band structure, Ellipsometry, GaP-InP-superlattice, Ordering",

author = "M. Schubert and H. Schmidt and J. {\v S}ik and T. Hofmann and V. Gottschalch and W. Grill and G. B{\"o}hm and G. Wagner",

year = "2002",

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day = "16",

doi = "10.1016/S0921-5107(01)00865-0",

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TY - JOUR

T1 - Interband transitions in [001]-(GaP)1(InP)m superlattices

AU - Schubert, M.

AU - Schmidt, H.

AU - Šik, J.

AU - Hofmann, T.

AU - Gottschalch, V.

AU - Grill, W.

AU - Böhm, G.

AU - Wagner, G.

PY - 2002/1/16

Y1 - 2002/1/16

N2 - We study the optical interband transitions of [001]-(GaP) 1(InP)m monolayer superlattices on (001) InP for m=5, 14, 27 and 51 using spectroscopic ellipsometry for photon energies from 1 to 6 eV. Samples were grown by metal-organic vapor phase epitaxy. We determine the InP-like E0, E0+Δ0, E1, E 1+Δ1, and E2 transitions from lineshape analysis of the pseudodielectric function 〈ε〉. The E0 and E0+Δ0 interband transitions depend on m due to effective alloying, strain, and symmetry reduction upon the superlattice period. Empirical pseudopotential calculations for superlattices with m=1,⋯,14 confirm the observed dependence of the E0 transition on the superlattice period. We further discuss our theoretical findings of type-II alignment for electrons and holes, which should be located within the GaP- and InP monolayers, respectively.

AB - We study the optical interband transitions of [001]-(GaP) 1(InP)m monolayer superlattices on (001) InP for m=5, 14, 27 and 51 using spectroscopic ellipsometry for photon energies from 1 to 6 eV. Samples were grown by metal-organic vapor phase epitaxy. We determine the InP-like E0, E0+Δ0, E1, E 1+Δ1, and E2 transitions from lineshape analysis of the pseudodielectric function 〈ε〉. The E0 and E0+Δ0 interband transitions depend on m due to effective alloying, strain, and symmetry reduction upon the superlattice period. Empirical pseudopotential calculations for superlattices with m=1,⋯,14 confirm the observed dependence of the E0 transition on the superlattice period. We further discuss our theoretical findings of type-II alignment for electrons and holes, which should be located within the GaP- and InP monolayers, respectively.

KW - Band structure

KW - Ellipsometry

KW - GaP-InP-superlattice

KW - Ordering

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U2 - 10.1016/S0921-5107(01)00865-0

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