Interband transitions in [001]-(GaP)1(InP)m superlattices

M. Schubert, H. Schmidt, J. Šik, T. Hofmann, V. Gottschalch, W. Grill, G. Böhm, G. Wagner

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We study the optical interband transitions of [001]-(GaP) 1(InP)m monolayer superlattices on (001) InP for m=5, 14, 27 and 51 using spectroscopic ellipsometry for photon energies from 1 to 6 eV. Samples were grown by metal-organic vapor phase epitaxy. We determine the InP-like E0, E00, E1, E 11, and E2 transitions from lineshape analysis of the pseudodielectric function 〈ε〉. The E0 and E00 interband transitions depend on m due to effective alloying, strain, and symmetry reduction upon the superlattice period. Empirical pseudopotential calculations for superlattices with m=1,⋯,14 confirm the observed dependence of the E0 transition on the superlattice period. We further discuss our theoretical findings of type-II alignment for electrons and holes, which should be located within the GaP- and InP monolayers, respectively.

Original languageEnglish (US)
Pages (from-to)125-128
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume88
Issue number2-3
DOIs
StatePublished - Jan 16 2002

Keywords

  • Band structure
  • Ellipsometry
  • GaP-InP-superlattice
  • Ordering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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