Abstract
ac conductance and capacitance measurements over the range 10 Hz to 10 MHz for amorphous carbon on silicon metal-insulator-semiconductor structures are reported. Data can be interpreted as being due to tunneling of electrons into gap states located in the dielectric. Interface state densities as low as 1.3×1010 eV cm2 are found.
Original language | English (US) |
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Pages (from-to) | 4299-4303 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 55 |
Issue number | 12 |
DOIs | |
State | Published - 1984 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy