ac conductance and capacitance measurements over the range 10 Hz to 10 MHz for amorphous carbon on silicon metal-insulator-semiconductor structures are reported. Data can be interpreted as being due to tunneling of electrons into gap states located in the dielectric. Interface state densities as low as 1.3×1010 eV cm2 are found.
ASJC Scopus subject areas
- Physics and Astronomy(all)