Abstract
Amorphous, “diamond-like” Carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined, and the density of interface states is unusually low for an as yet unoptimized.
Original language | English (US) |
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Pages (from-to) | 146-149 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 4 |
Issue number | 5 |
DOIs | |
State | Published - May 1983 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering