Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy

H. Q. Ni; Y. F. Lu; Z. Y. Liu; H. Qiu; W. J. Wang; Z. M. Ren; S. K. Chow; Y. X. Jie

doi:10.1063/1.1391225

Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy

H. Q. Ni, Y. F. Lu, Z. Y. Liu, H. Qiu, W. J. Wang, Z. M. Ren, S. K. Chow, Y. X. Jie

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured.

Original language	English (US)
Pages (from-to)	812-814
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	6
DOIs	https://doi.org/10.1063/1.1391225
State	Published - Aug 6 2001
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1391225

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title = "Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy",

abstract = "We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured.",

author = "Ni, {H. Q.} and Lu, {Y. F.} and Liu, {Z. Y.} and H. Qiu and Wang, {W. J.} and Ren, {Z. M.} and Chow, {S. K.} and Jie, {Y. X.}",

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AU - Ni, H. Q.

AU - Lu, Y. F.

AU - Liu, Z. Y.

AU - Qiu, H.

AU - Wang, W. J.

AU - Ren, Z. M.

AU - Chow, S. K.

AU - Jie, Y. X.

PY - 2001/8/6

Y1 - 2001/8/6

N2 - We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured.

AB - We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured.

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