Abstract
We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 812-814 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 79 |
| Issue number | 6 |
| DOIs | |
| State | Published - Aug 6 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Ni, H. Q., Lu, Y. F., Liu, Z. Y., Qiu, H., Wang, W. J., Ren, Z. M., Chow, S. K., & Jie, Y. X. (2001). Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy. Applied Physics Letters, 79(6), 812-814. https://doi.org/10.1063/1.1391225