Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition

F. Namavar, P. C. Colter, N. Planes, B. Fraisse, J. Pernot, S. Juillaguet, J. Camassel

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Investigation of porous silicon as a new compliant substrate for hetero-epitaxial deposition of 3C-SiC on silicon has been performed. The resulting layer has been analyzed in terms of X-ray diffraction, infrared reflectivity, micro-Raman scattering and low temperature photoluminescence experiments. From the results, intermediate properties between 3C-SiC deposited on bulk silicon and 3C-SiC deposited on SIMOX have been found.

Original languageEnglish (US)
Pages (from-to)571-575
Number of pages5
JournalMaterials Science and Engineering B
Volume61-62
DOIs
StatePublished - Jul 30 1999
Externally publishedYes

Keywords

  • 3C-SiC deposition
  • New compliant substrate
  • Porous silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Namavar, F., Colter, P. C., Planes, N., Fraisse, B., Pernot, J., Juillaguet, S., & Camassel, J. (1999). Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition. Materials Science and Engineering B, 61-62, 571-575. https://doi.org/10.1016/S0921-5107(98)00476-0