TY - JOUR
T1 - Investigation of state retention in metal-ferroelectric-insulator- semiconductor structures based on Langmuir-Blodgett copolymer films
AU - Reece, Timothy J.
AU - Gerber, A.
AU - Kohlstedt, H.
AU - Ducharme, Stephen
N1 - Funding Information:
Work at the University of Nebraska was supported by the USA National Science Foundation (Grant No. ECS-0600130). Work at the Institute of Solid State Research (IFF) was supported by Volkswagen-Stiftung (www.volkswagenstiftung.de) within the program “Complex Materials: Cooperative Projects of the Natural, Engineering, and Biosciences” under the title: “Nanosized ferroelectric Hybrids” under Project No. I/77 737.
PY - 2010/7/15
Y1 - 2010/7/15
N2 - Among the ferroelectric thin films considered for use in nonvolatile memory devices, the ferroelectric copolymer of polyvinylidene fluoride, PVDF (C 2H2F2), with trifluoroethylene, TrFE (C 2HF3), has distinct advantages, including low dielectric constant, low processing temperature, relative low cost compared with epitaxial ferroelectric oxides, and compatibility with organic semiconductors. We report the operation and polarization retention properties of a metal-ferroelectric- insulator-semiconductor bistable capacitor memory element consisting of an aluminum gate, a P(VDF-TrFE) Langmuir-Blodgett film, a 30 nm cerium oxide buffer layer, and a moderately doped silicon wafer. The device exhibited a 1.9 V wide hysteresis window obtained with a ±7 V operating range with a state retention time of 10 min. The mechanisms contributing to loss of state retention are discussed.
AB - Among the ferroelectric thin films considered for use in nonvolatile memory devices, the ferroelectric copolymer of polyvinylidene fluoride, PVDF (C 2H2F2), with trifluoroethylene, TrFE (C 2HF3), has distinct advantages, including low dielectric constant, low processing temperature, relative low cost compared with epitaxial ferroelectric oxides, and compatibility with organic semiconductors. We report the operation and polarization retention properties of a metal-ferroelectric- insulator-semiconductor bistable capacitor memory element consisting of an aluminum gate, a P(VDF-TrFE) Langmuir-Blodgett film, a 30 nm cerium oxide buffer layer, and a moderately doped silicon wafer. The device exhibited a 1.9 V wide hysteresis window obtained with a ±7 V operating range with a state retention time of 10 min. The mechanisms contributing to loss of state retention are discussed.
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U2 - 10.1063/1.3452331
DO - 10.1063/1.3452331
M3 - Article
AN - SCOPUS:77955829970
SN - 0021-8979
VL - 108
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 2
M1 - 024109
ER -