Investigation of the free charge carrier properties at the ZnO-sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry

C. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinländer, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, M. Grundmann

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

The free charge carrier properties at the film-substrate interface of non-polar ZnO films were investigated by generalized infrared spectroscopic ellipsometry in dependence on film thickness and annealing time. For all samples a highly-conductive film-substrate interface layer was found. It was observed that the charge density at the interface increases with increasing film thickness and decreases with increasing annealing time. Possible explanations could be the diffusion of Al from the substrate into the ZnO film, the formation of zinc aluminate, or structural changes, respectively.

Original languageEnglish (US)
Pages (from-to)1350-1353
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number5
DOIs
StatePublished - Dec 1 2008
Event4th International Conference on Spectroscopic Ellipsometry, ICSE4 - Stockholm, Sweden
Duration: Jun 11 2007Jun 15 2007

ASJC Scopus subject areas

  • Condensed Matter Physics

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