Ion implantation in single-crystal magnetic ferrite

M. Takai, H. Ryssel, Y. F. Lu, T. Minamisono, S. Namba

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Single crystalline magnetic ferrite was implanted with nitrogen ions at 180 keV to investigate recrystallization behavior by post implantation annealing at temperatures from 700 to 900 °C. The recrystallization behavior was further compared with that after mechanical surface polishing followed by annealing. An annealing stage at 800 ° C was found to exist for the lattice damage induced either by ion implantation or by mechanical surface polishing. An activation energy of 2.0 eV was obtained for the recrystallization process.

Original languageEnglish (US)
Pages (from-to)728-731
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume39
Issue number1-4
DOIs
StatePublished - Mar 2 1989

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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