Single crystalline magnetic ferrite was implanted with nitrogen ions at 180 keV to investigate recrystallization behavior by post implantation annealing at temperatures from 700 to 900 °C. The recrystallization behavior was further compared with that after mechanical surface polishing followed by annealing. An annealing stage at 800 ° C was found to exist for the lattice damage induced either by ion implantation or by mechanical surface polishing. An activation energy of 2.0 eV was obtained for the recrystallization process.
ASJC Scopus subject areas
- Nuclear and High Energy Physics