Ion source assisted pulse laser deposition of carbon nitride thin films

Z. F. He, Y. F. Lu, Z. H. Mai, Z. M. Ren

Research output: Contribution to journalConference articlepeer-review


Pulsed laser generated carbon plasma combined with a nitrogen ion source has been used to synthesize carbon nitride thin films. This synthesis method has the both advantages of pulsed laser deposition (PLD) and ion implantation. The average ion beam current, the beam voltage, the laser pulse energy, and substrate temperature can be controlled systematically. STM has been used to study the surface properties. The (dI/dV)/(I/V) values have been calculated to study the local density of states (LDOS) on the film surface. Experiment results have been analyzed by Raman spectra to see the influence of the different ion beam voltages. Thin films CNX with nitrogen content of 32% have been investigated by X-ray photoelectron spectroscopy (XPS). The results can reveal the formation of different bonds. Fourier transform infrared (FTIR) was also used to study the bonding of films. The hardness of the synthesized thin film was analyzed by a nanoindenter. The result shows that the hardness of carbon nitride is quite high.

Original languageEnglish (US)
Pages (from-to)404-412
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 Photonic Systems and Applications in Defence and Manufacturing - Singapore, Singapore
Duration: Dec 1 1999Dec 3 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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