IR-VUV dielectric function of Al1-xInxN determined by spectroscopic ellipsometry

A. Kasic, M. Schubert, B. Rheinländer, J. Off, F. Scholz, C. M. Herzinger

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


Spectroscopic Ellipsometry from the mid-infrared (mid-ir) to the vacuum-ultraviolet (vuv) spectral range (350 cm-1... 8.8 eV) is used to study the optical properties of hexagonal MOVPE-grown Al1-xInxN films for 0.11 ≤x ≤ 0.21. The AlInN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Approximately 120 nm thick Al1-xInxN films grown on slightly compressively strained hexagonal GaN buffer layers reveal the influence of in-plane strain on the E1(TO) phonon mode frequencies. Al1-xInxN deposited directly on [0001] sapphire substrate possesses E1(TO) mode frequency which indicate fully relaxed film growth. For high-quality Al0.890In0.110N one A1(LO) phonon mode was observed. Furthermore, we present the complex dielectric function of hexagonal Al0.872In0.128N from the mid-ir to vuv spectral range.

Original languageEnglish (US)
Pages (from-to)G6.13.1-G6.13.6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2001
Externally publishedYes
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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