TY - JOUR
T1 - IR-VUV dielectric function of Al1-xInxN determined by spectroscopic ellipsometry
AU - Kasic, A.
AU - Schubert, M.
AU - Rheinländer, B.
AU - Off, J.
AU - Scholz, F.
AU - Herzinger, C. M.
N1 - Funding Information:
This work was supported in part by DFG under grant Rh 28-3/1 (SPP 1032), and in part under NSF contract DMI-9901510. The authors acknowledge valuable discussions with Professor F. Bechstedt and H. Grille who also provided us with data from reference 5.
PY - 2001
Y1 - 2001
N2 - Spectroscopic Ellipsometry from the mid-infrared (mid-ir) to the vacuum-ultraviolet (vuv) spectral range (350 cm-1... 8.8 eV) is used to study the optical properties of hexagonal MOVPE-grown Al1-xInxN films for 0.11 ≤x ≤ 0.21. The AlInN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Approximately 120 nm thick Al1-xInxN films grown on slightly compressively strained hexagonal GaN buffer layers reveal the influence of in-plane strain on the E1(TO) phonon mode frequencies. Al1-xInxN deposited directly on [0001] sapphire substrate possesses E1(TO) mode frequency which indicate fully relaxed film growth. For high-quality Al0.890In0.110N one A1(LO) phonon mode was observed. Furthermore, we present the complex dielectric function of hexagonal Al0.872In0.128N from the mid-ir to vuv spectral range.
AB - Spectroscopic Ellipsometry from the mid-infrared (mid-ir) to the vacuum-ultraviolet (vuv) spectral range (350 cm-1... 8.8 eV) is used to study the optical properties of hexagonal MOVPE-grown Al1-xInxN films for 0.11 ≤x ≤ 0.21. The AlInN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Approximately 120 nm thick Al1-xInxN films grown on slightly compressively strained hexagonal GaN buffer layers reveal the influence of in-plane strain on the E1(TO) phonon mode frequencies. Al1-xInxN deposited directly on [0001] sapphire substrate possesses E1(TO) mode frequency which indicate fully relaxed film growth. For high-quality Al0.890In0.110N one A1(LO) phonon mode was observed. Furthermore, we present the complex dielectric function of hexagonal Al0.872In0.128N from the mid-ir to vuv spectral range.
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M3 - Conference article
AN - SCOPUS:0035558827
SN - 0272-9172
VL - 639
SP - G6.13.1-G6.13.6
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - GaN and Related Alloys 2000
Y2 - 27 November 2000 through 1 December 2000
ER -