Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate

Philip D. Edmondson, Neil P. Young, Chad M. Parish, Fereydoon Namavar, William J. Weber, Yanwen Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of nanocrystalline ceria on a Si substrate have been irradiated with 3 MeV Au+ ions to fluences of up to 1x1016 ions cm-2, at temperatures ranging between 160 to 400 K. During the irradiation, a band of contrast is observed to form at the thin film/substrate interface. Analysis by scanning transmission electron microscopy in conjunction with energy dispersive and electron energy loss spectroscopy techniques revealed that this band of contrast was a cerium silicate amorphous phase, with an approximate Ce:Si:O ratio of 1:1:3.

Original languageEnglish (US)
Title of host publicationAdvances in Materials for Nuclear Energy
Pages87-92
Number of pages6
DOIs
StatePublished - Nov 26 2013
Event2012 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 25 2012Nov 30 2012

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1514
ISSN (Print)0272-9172

Conference

Conference2012 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/25/1211/30/12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate'. Together they form a unique fingerprint.

  • Cite this

    Edmondson, P. D., Young, N. P., Parish, C. M., Namavar, F., Weber, W. J., & Zhang, Y. (2013). Irradiation induced effects at interfaces in a nanocrystalline ceria thin film on a Si substrate. In Advances in Materials for Nuclear Energy (pp. 87-92). (Materials Research Society Symposium Proceedings; Vol. 1514). https://doi.org/10.1557/opl.2013.387