Isolation of a metallic Si(111)7X7 surface reconstruction via separation by implanted oxygen

M. Noh, G. E. Jellison, F. Namavar, H. H. Weitering

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

High-quality Si(111)7X7 surface reconstructions have been observed on (111)-oriented Si/SiO2/Si substrates, prepared via separation by implantation of oxygen, or "SIMOX," with top layer thicknesses as small as 220 Å. Scanning tunneling microscopy and spectroscopy data indicate that the electrically and physically isolated top layer is electrically conducting, in contrast to that of (100) SIMOX material, which accumulates charge under typical imaging conditions. We speculate that the 7X7 reconstruction on (111) SIMOX material is an efficient conduction channel, allowing atomic resolution imaging of the isolated Si top layer.

Original languageEnglish (US)
Pages (from-to)733-735
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number6
DOIs
StatePublished - Feb 7 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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