KrF Excimer Laser Deposition of Titanium Thin Films on Silicon Substrates

L. W. Lu, Y. F. Lu, M. H. Hong, T. M. Ho, T. S. Low

Research output: Contribution to journalConference article

Abstract

Pulsed laser deposition (PLD) of titanium thin films on p-type (100) silicon substrates by KrF excimer laser ablation is investigated by changing the deposition parameters during the thin film deposition. The influence of target-to-substrate distance, laser fluence and substrate temperature is studied for high quality titanium thin films. Energy dispersive X-ray (EDX) spectrum analysis of the thin films is also carried out. The surface texture of the titanium target after the laser irradiation is studied by scanning electron microscope (SEM) images. It is found that the most important deposition parameters which affect the thin film quality are target-to-substrate distance and laser fluence. A suitable target-to-substrate distance and laser fluence can minimize the deposition of micro-sized particulates on the thin films. By optimizing the deposition parameters, the less particulate, higher deposition rate and more uniform titanium thin films are grown on the silicon substrates for wafer metallization.

Original languageEnglish (US)
Pages (from-to)110-119
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3550
DOIs
StatePublished - Aug 15 1998
EventLaser Processing of Materials and Industrial Applications II 1998 - Beijing, China
Duration: Sep 16 1998Sep 19 1998

Keywords

  • Edx and pld deposition parameters
  • Particulate
  • Pulsed laser deposition
  • Titanium thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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