Laser-induced dry chemical etching of Mn-Zn ferrite in CCl2F2 atmosphere

Y. F. Lu; M. Takai; S. Nagamoto; S. Namba

doi:10.1007/BF00325481

Laser-induced dry chemical etching of Mn-Zn ferrite in CCl₂F₂ atmosphere

Y. F. Lu, M. Takai, S. Nagamoto, S. Namba

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Maskless etching of Mn-Zn ferrite in dichlorodifluoromethane (CCl₂F₂) by Ar⁺-ion laser (514.5 nm line) irradiation has been investigated to obtain high etching rates and aspect-ratio of etched grooves. The etching reaction was found to be thermochemical. High etching rates of up to 360 μm/s, which is about one order of magnitude higher than that in a CCl₄ gas atmosphere and even higher than that in a H₃PO₄ solution, have been achieved. A maximum aspect-ratio of 6.9 was obtained.

Original language	English (US)
Pages (from-to)	39-45
Number of pages	7
Journal	Applied Physics B Photophysics and Laser Chemistry
Volume	53
Issue number	1
DOIs	https://doi.org/10.1007/BF00325481
State	Published - Jul 1991
Externally published	Yes

Keywords

75.50G
81.60

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1007/BF00325481

Cite this

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abstract = "Maskless etching of Mn-Zn ferrite in dichlorodifluoromethane (CCl2F2) by Ar+-ion laser (514.5 nm line) irradiation has been investigated to obtain high etching rates and aspect-ratio of etched grooves. The etching reaction was found to be thermochemical. High etching rates of up to 360 μm/s, which is about one order of magnitude higher than that in a CCl4 gas atmosphere and even higher than that in a H3PO4 solution, have been achieved. A maximum aspect-ratio of 6.9 was obtained.",

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AU - Lu, Y. F.

AU - Takai, M.

AU - Nagamoto, S.

AU - Namba, S.

PY - 1991/7

Y1 - 1991/7

N2 - Maskless etching of Mn-Zn ferrite in dichlorodifluoromethane (CCl2F2) by Ar+-ion laser (514.5 nm line) irradiation has been investigated to obtain high etching rates and aspect-ratio of etched grooves. The etching reaction was found to be thermochemical. High etching rates of up to 360 μm/s, which is about one order of magnitude higher than that in a CCl4 gas atmosphere and even higher than that in a H3PO4 solution, have been achieved. A maximum aspect-ratio of 6.9 was obtained.

AB - Maskless etching of Mn-Zn ferrite in dichlorodifluoromethane (CCl2F2) by Ar+-ion laser (514.5 nm line) irradiation has been investigated to obtain high etching rates and aspect-ratio of etched grooves. The etching reaction was found to be thermochemical. High etching rates of up to 360 μm/s, which is about one order of magnitude higher than that in a CCl4 gas atmosphere and even higher than that in a H3PO4 solution, have been achieved. A maximum aspect-ratio of 6.9 was obtained.

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