Laser-induced dry lift-off process

Yong Feng Lu; Yoshinobu Aoyag

doi:10.1143/JJAP.34.L1669

Laser-induced dry lift-off process

Yong Feng Lu, Yoshinobu Aoyag

Research output: Contribution to journal › Article › peer-review

Abstract

A dry lift-off process has been achieved using pulsed KrF excimer laser irradiation in air to remove AZ resist and to form SÍO2 patterns on GaAs substrate. SÍO2 patterns with a resolution of quarter-micron order can be obtained by this process. The process is attributed to the laser photodecomposition of the resist material.

Original language	English (US)
Pages (from-to)	L1669-L1670
Journal	Japanese Journal of Applied Physics
Volume	34
Issue number	12
DOIs	https://doi.org/10.1143/JJAP.34.L1669
State	Published - Dec 1995
Externally published	Yes

Keywords

Dry process
Laser lift-off
Photoresist
UV pulse laser

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.34.L1669

Cite this

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title = "Laser-induced dry lift-off process",

abstract = "A dry lift-off process has been achieved using pulsed KrF excimer laser irradiation in air to remove AZ resist and to form S{\'I}O2 patterns on GaAs substrate. S{\'I}O2 patterns with a resolution of quarter-micron order can be obtained by this process. The process is attributed to the laser photodecomposition of the resist material.",

keywords = "Dry process, Laser lift-off, Photoresist, UV pulse laser",

author = "Lu, {Yong Feng} and Yoshinobu Aoyag",

year = "1995",

month = dec,

doi = "10.1143/JJAP.34.L1669",

language = "English (US)",

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pages = "L1669--L1670",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "12",

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AU - Lu, Yong Feng

AU - Aoyag, Yoshinobu

PY - 1995/12

Y1 - 1995/12

N2 - A dry lift-off process has been achieved using pulsed KrF excimer laser irradiation in air to remove AZ resist and to form SÍO2 patterns on GaAs substrate. SÍO2 patterns with a resolution of quarter-micron order can be obtained by this process. The process is attributed to the laser photodecomposition of the resist material.

AB - A dry lift-off process has been achieved using pulsed KrF excimer laser irradiation in air to remove AZ resist and to form SÍO2 patterns on GaAs substrate. SÍO2 patterns with a resolution of quarter-micron order can be obtained by this process. The process is attributed to the laser photodecomposition of the resist material.

KW - Dry process

KW - Laser lift-off

KW - Photoresist

KW - UV pulse laser

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DO - 10.1143/JJAP.34.L1669

M3 - Article

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SP - L1669-L1670

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12

ER -

Laser-induced dry lift-off process

Abstract

Keywords

ASJC Scopus subject areas

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